2SC4275 SAVANTIC

Document overview

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Technical content

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC4275

DESCRIPTION

  • With TO-3PN package
  • High voltage ,high speed
  • Low collector saturation voltage
  • High reliability

APPLICATIONS

  • Switching regulators
  • DC-DC convertor
  • Solid state relay
  • General purpose power amplifiers PINNING PIN DESCRIPTION

1 Base

2 Collector;connected to

3 Emitter

Absolute maximum ratings(Ta=) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 500 V VCEO Collector-emitter voltage Open base 400 V VEBO Emitter-base voltage Open collector 10 V IC Collector current 10 A IB Base current 3 A PC Collector power dissipation T C=25 80 W Tj Junction temperature 150 Tstg Storage temperature -55~150 THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-C Thermal resistance junction case 1.56 /W Fig.1 simplified outline (TO-3PN) and symbol

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC4275 CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter sustaining voltage I C=0.2A ;IB=0 400 V V(BR)CBO Collector-base breakdown voltage I C=1mA ;IE=0 500 V V(BR)EBO Emitter-base breakdown voltage I E=1mA ;IC=0 10 V VCEsat Collector-emitter saturation voltage I C=4A; IB=0.8A 0.8 V VBEsat Base-emitter saturation voltage I C=4A; IB=0.8A 1.2 V ICBO Collector cut-off current V CB=450V; IE=0 100 µA IEBO Emitter cut-off current V EB=10V; IC=0 100 µA hFE DC current gain I C=1A ; VCE=5V 25 65 Switching times ton Turn-on time 1.0 µs ts Storage time 2.5 µs tf Fall time IC=5A;RL=30@ IB1=0.5A; IB2=-1A Pw = 20µs; DutyA2% 0.5 µs

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC4275 PACKAGE OUTLINE Fig.2 outline dimensions (unindicated tolerance:±0.1mm)

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC4275