2SC4273 ISC
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 4
Technical content
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4273 DESCRIPTION ·
- With TO-220C package
- High voltage,high speed
- Low saturation voltage
- High reliability
APPLICATIONS
- Switching regulators
- DC-DC convertor
- Solid state relay
- General purpose power amplifiers PINNING PIN DESCRIPTION
1 Base
2 Collector;connected to
3 Emitter
Absolute maximum ratings(Tc=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 500 V VCEO Collector-emitter voltage Open base 400 V VEBO Emitter-base voltage Open collector 10 V IC Collector current 5 A IB Base current 2 A PC Collector dissipation 40 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-C Thermal resistance junction case 3.0 ℃/W
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4273 CHARACTERISTICS Tj=25℃ unless otherwise specifie SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CBO Collector-base breakdown voltage I C=1mA ; IE=0 500 V V(BR)CEO Collector-emitter breakdown voltage I C=0.2A ; IB=0 400 V V(BR)EBO Emitter-base breakdown voltage I E=1mA ; IC=0 10 V VCEsat Collector-emitter saturation voltage I C=2A; IB=0.4A 0.8 V VBEsat Base-emitter saturation voltage I C=2A; IB=0.4A 1.2 V ICBO Collector cut-off current V CB=450V ;IE=0 100 μA IEBO Emitter cut-off current V EB=10V; IC=0 100 μA hFE DC current gain I C=0.5A ; VCE=5V 25 55 Switching times ton Turn-on time 1.0 μs tstg Storage time 2.5 μs tf Fall time VCC=200V; IC=2.5A IB1=0.25A;IB2=-0.5A; RL=60Ω 0.5 μs
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4273 PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm)
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4273