2SC4269 SANYO
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 4
Technical content
Features
High power gain: PG=15dB typ (f= 0.4GHz) + High cutoff frequency : fp=1.2GHz typ Absolute Maximum Ratings at Ta= 25°C unit Collector to Base Voltage Vcso 30 OV Collector to Emitter Voltage Voro 15 Vv Emitter to Base Voltage VEBO 3 Vv Collector Current Ic 50 mA Base Current Ip 20 mA Collector Dissipation Po 250 mW Junction Temperature Tj 150 °C Storage Temperature Tstg -55to+150 °C Electrical Characteristics at Ta= 25°C min typ max unit Collector Cutoff Current IcBo Vep=20V Ig=0 0.1 pA Emitter Cutoff Current IgBo Vep=2V,Ic=0 1 pA DC Current Gain hrg Vcg=10V,Ic=5mA 40% 200% Gain-Bandwidth Product fr Voe=10V,Ig=10mA 06 1.2 GHz Output Capacitance Cob Vop=10V,f=1MHz 0.75 11 pr Reverse Transfer Capacitance Cre Vep=10V,f=1MHz 0.5 pF Power Gain PG Ver=10V,Ic¢=10mA,f=0.4GHz 15 dB Noise Figure NF Vcoe=10V,Ic¢=3mA,f=0.4GHz 2.0 dB % : The 25C4269 is classified by 5mA hpg as follows: 60 3 120 (Note) Marking: JT : hpg rank : 2,3,4 Package Dimensions 2018A (unit : mm) rT . et 9 = 4 bos. C: Collector B: Base ET H0-4 SANYO: CP SANYO Electric Co.,Ltd. Semiconductor Business Headquarters TOKYO OFFICE Tokyo Bldg.,1-10,1 Chome, Ueno, Taito-ku, TOKYO, 110 JAPAN 9219MO/6069MO,TS No.2969-1/4
a PG, NF Test Circuit : ; oa ans c2 co | | Hee os C5 ~30pF : Li 29,1=40mm 2/3t im L2 2g,1=40mm 2/3t L3 1¢,1=40mm 1/2t Unit (Resistance : 2) hre — Ic ft - Ice PU ET TT TT Peo te TTT TT TT te] Hee: +44 obserocerareo «og, | [PT oe Nee evita TN | ¢ Hee Ptocoopeooo PE BUTT) cere Pact tT TT TU 40 s See Sea OO Se ee 10? 574 2 S72 1.0 TST 9 7 5 Tey Collector Current,Ig — mA “Collector CurrentIg — mA. Cob, Cre — VcB 20 PG - Ic oe te PRATT gs =. re POS Re Tea BoP SSS oe B : eos FT éeyit Tilt? TTT] =? ROC 2 Oo fot PSSST (os ° T 4.0 v5 7 49 3 35 7 Ww 1.0 10 100 Collector to Base Voltage,Vcp — V Collector Current,lc — mA No.2969-2/4
TOT T) Coo oo ECO eee eE CE POLAT pe HH CN 40 Collector Car oate mA ° 7 . * Ambient Temperature,Ta eM S parameter Sile: Vce=10V S12e: Vce= 10V f=100MHz, 200~1200MHz(200MHz step) f=100MHz, 200~1200MHz(200MHz step) it Ee . [i SE i SAR LIE RESON SATA RENE OSSN Lot ES) wl eer 40.2 6.{Ghe +E - SSRIS SOY, e a REESE es SEES S21e : Vce=10V S22e : Vce= 10V f=100MHz, 200~1200MHz(200MHz step) f=100MHz, 200~1200MHz(200MHz step) GHz o Ff 1208 ae 60° j2 SEES KASS Macc (estat a re eugunetecc: ;, CoossEen, SR SESS -jos 2
S parameter (Common emitter) Vce=10V, Ic= 5 mA, Zo=502 Freq (Miz) isiil zsa_| isu VcE=10V, Ic=20mA, Zo==502 Freq (MH) 4se | isa M No products described or contained herein are intended for use in surgical implants, life-support systems, aerospace equipment, nuclear power control systems, vehicles, disaster/crime-prevention equipment and the like, the failure of which may directly or indireotly cause injury, death or property loss. M Anyone purchasing any products described or contained herein for an above-mentioned use shall: © Accept full responsibility and indemnify and defend SANYO ELECTRIC CO., LTD., its affiliates, subsidiaries and distributors and all their officers and employees, jointly and severally, against any and all olaims and litigation and all damages, cost and expenses associated with such use: ® Not impose any responsibility for any fault or negligence which may be cited in any such claim or litigation on SANYO ELECTRIC CO,, LTD,, its affiliates, subsidiaries and distributors or any of their officers and employees jointly or severally. W@ Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guarant- eed for volume production, SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties, No.2969-4/4