2SC4221 SANYO
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 3
Technical content
Features
. High breakdown voltage, high reliability - Fast switching speed (tp: 0.1us typ) . Wide ASO . Adoption of MBIT process . Suitable for sets whose height is restricted Absolute Maximum Ratings at Ta=25°C unit Collector to Base Voltage Vopo 800 v Collector to Emitter Voltage Voro 500 Vv Emitter to Base Voltage Vepo 1 v Collector Current Ig 3 A Peak Collector Current lop PW£300ps ,duty eycleg 10% 6 A Base Current Ip 1 A Allowable Power Dissipation Pc Te=25°C 40 W Junction Temperature Tj 150 °C Storage Temperature Tstg -55 to +150 °C Electrical Characteristics at Ta=25°C min typ max unit Collector Cutoff Current Icpo Vep=500V,Ip=0 10 pA Emitter Cutoff Current Ippo VpptV,Ic=0 10 pA DC Current Gain hep)" Vop=5V,Ig=0.34 15 50 bpe(p) Voge bVsIg=1.58 8 C-E Saturation Voltage Vor(sat) Z¢=1-54,1p=0.3A 1.0 OV B-E Saturation Voltage VBE(sat) Ip=1.5A,1p=0.3A 1.5 Vv Gain-Bandwidth Product fy Voge 10V,Ip=0.3A 18 MHz Output Capacitance Cop Voge 10V, f= 1MHz 50 pF Continued on next page. *:The hpg(4) of the 2SC4221 is classified as follows. When specifying the hpE(4) rank, specify two ranks or more,
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Switching Time Test Circuit Package Dimensions 2049 , (unit: mm) Bl fa . 1 22 JL te Lt vR ied - £ |_|) Oop 3 ————s) +43 4 4 he 2 ry = 200v n. 9.6 EA PW=20us, Duty Cycle£ 1% ve E. Emitter ~ + “ 6 €. Collector Unit (resistance: ©, capacitance: F) B. Base i -l SANYO: TO-220MF_ SANYO Electric Co.,Ltd. Semiconductor Business Headquarters - TOKYO OFFICE Tokyo Bldg.,1-10,1 Chome, Ueno, Taito-ku, TOKYO, 110 JAPAN . N228M0,TS No.2816-1/3
28¢4221 ee Continued from preceding page, Hess typ max unt C-B Breakdown Voltage V, IgeimA I,-0 00 C-E Breakdown Voltage vier ope Tg=5mA, Rype0o 500 Vv E-B Breakdown Voltage V(pp)epq Ig=1mA,Ip=0 7 v C-E Sustain Voltage Vv Te=1.5A8,1,,=0.6A 500 Vv CEX(sus) -C B1 L=2mH,Ip5=-0.6A,clamped Turn-ON Time ton Ig=2A,1, =0.4A 0.5 ps Tpoe-0.BA, R, = 1000hms Vog=200¥ Storage Time t, 3.0 ps stg Fall Time te 0.3 ps Ic - Vee Ic _~ Ve “OTT Oe ey eet wos Sal oe crt! ys, ! (tot rey et B 0 oa — are Fao | E eypeee ete CTT ° | & eee Oy
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oe ae ¢ ge va aq] Ne | TT Pee) e .0 al ae" Crore LO KY & ef of Corea Ne eg a A A a a A 20) INYo, HoT Oe Pe de 5 ‘ BC tp Nt Fee att | tT tT |} NGG Pr 8 Pee ° iN OF 1 0 00 100 0 0» © © & WO 1D 10 160 Time,t - ms Ambient Temperature,Ta - °C No products described or contained herein are intended for use in surgical implants, life-support systems, aerospace equipment, nuclear power control systems, vehicles, disaster/crime-prevention equipment and the like, the failure of which may directly or indirectly cause injury, death or property loss. Anyone purchasing any products described or contained herein for an above-mentioned use shall: " ® Accept full responsibility and indemnity and defend SANYO ELECTRIC CO., LTD., its affiliates, subsidiaries and distributors and all their officers and employees, jointly and severally, against any and all claims and litigation and all damages, cost and expenses associated with such use: ® Not impose any responsibility for any fault or negligence which may be cited in any such claim or litigation on SANYO ELECTRIC CO, LTD,, its affiliates, subsidiaries and distributors or any of their officers and employees jointly or severally. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guarant- eed for volume production, SANYO believes information herein is accurate ‘and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties, No. 2816-3/3