2SC4213 TOSHIBA

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TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS) FOR MUTING AND SWITCHING APPLICATIONS Unit in mm 2a%04 e High Emitter-Base Voltage : VeRQ=25V (Min.) p2520.1, . a So @ = High Reverse hr : Reverse hpg=150 (Typ.) 7. +A (VeR=—2V, I¢=—4mA) 3] 3 e I a] 2] 3 3 © Low On Resistance : Ron=10 (Typ.) @gp=5mA) q e High DC Current Gain : heg=200~1200 © Small Package B Pe al 3 a MAXIMUM RATINGS (Ta = 25°C) 5 CHARACTERISTIC SYMBOL UNIT Collector-Base Voltage Vcpo | 50 [| V_ | 1, BASE Collector-Emitter Voltage Vcco | 20 | V FeO LecroR Emitter-Base Voliage VERO Collector Current JEDEC = PBase Current ———~—~S~d ism A [BIAS S¢-70 Collector Power Dissipation TOSHIBA 2-2E1A Junction Temperatare Weight 00065 Storage Temperature Range —55~125 MARKING Type Name = hyp Rank 9610016 4A @ TOSHIBA is continually working to improve the quality and the reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to observe standards of safety, and to avoid situations in which a malfunction or failure of a TOSHIBA product could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent’ products specifications. Also, please keep in mind the precautions and conditions set forth in the TOSHIBA Semiconductor Reliability Handbook. @ The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third Parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. @ The information contained herein is subject to change without notice. 1998-12-17 1/4

TOSHIBA 2$C4213 ELECTRICAL CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC SYMBOL TEST CONDITION Collector CutoiF Current | Tong |Vop=s0v,g=0 ‘| — | — | 01] aa femitter Cut-off Current | Igp0 _[VEB=25V, I¢=0 ——*(| — | — | 04 | pA | FDC Current Gain [bps (Note) |VeR=2V, Io=amA | 200 | — [1200] Collector-Emitter Saturation _ _ fea [Nemes mrs | — [nol | fBase-Bimitter Vonage | Vag _[Von=3V,Ig=amA | — | om] — | V1 Transition Frequency | fy |Vcp=6V,I¢=4mA | — | 90| — | Mii Collector Output Capacitance Vcp=10V, In=0, f=1MHz [ — | 48/ 7] pF | , OUTPUT INPUT ge S BEE Switching . 10V Ha a Time Storage Time | tetg 0 {1 sey 2 7 500 ns ys VBB_ Vcc Fall Ti =-3V =12V 1 an ome tt DUTY CYCLE<2% 80 (Note) : hyR Classification A : 200~700, B : 350~1200 1998-12-17 2/4

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