2SC4210 TOSHIBA
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TOSHIBA 2$C4210 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS) AUDIO POWER AMPLIFIER APPLICATIONS Unit in mm +95 ¢ High DC Current Gain : hg = 100~320 25-03 +025 © Complementary to 25A1621 a | oJ EH can MAXIMUM RATINGS (Ta = 25°C) 9 >| S| S| 2 FE} CHARACTERISTIC SYMBOL unr |} 2 i _ 3 Collector-Base Voltage VoBo oH Collector-Emitter Voltage VCEO ol al Emitter Base Vollage Veso | 5 | vi} | 8 ; i Collector Current # E [Base Current | wT t0 Tm - = Collector Power Dissipation 3 [Junction Temperature ———~+| tj | 160 | °C _| : Storage Temperature Range —55~150 1. BASE 8 P is Se 2. EMITTER MARKING S-MINI 3. COLLECTOR ‘Type Name JEDEC _T0-236MOD = hyp Rank EIAT SC-59 | xo-] TOSHIBA _2-3F1A ELECTRICAL CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC | SyatBoL | TEST CONDITION Collector Cut-off Current Topo |Vop =35V, Ip =0 L— 101] ZA | Emitter Cut-off Curent | Igo |VEB=5V, Ic =0 P= = orl na | Collector-Emitter Breakdown amiendiesiowninno | || -|¥ hFE (1) Vor = 1V, Ic = 100mA DC Current Gain (Note) | "CE Cc [bre @ [Von=1V.io=700mA [ssf — [— | Collector-Emitter Saturation tor foranon tsa [= [= [sl v | Base-Emitier Vollage Von =1V, Ig =10mA [os — [08] v_ | Von =5V.Ig=10mA = [0 — are | Collector Output Capacitance Vop=10V, Ig=0,f=iMHe | — | 13] — | oF | (Note) : hg (1) Classification O: 100~200, Y : 160~320 261001601 @ TOSHIBA is continually working to improve the quality and the reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to observe standards of safety, and to avoid situations in which a malfunction or failure of a TOSHIBA product could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent products specifications. Also, please keep in mind the precautions and conditions set forth in the TOSHIBA Semiconductor Reliability Handbook. @ The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or ‘other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. @ The information contained herein is subject to change without notice. 1998-12-04 1/2
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2 FSR het
8 [feet fal | é et = 400 _ 4 2 sop 8 | ae |
2 LE TET
0 ABR 5 3 10 30 100 300 1000
° 1 2 3 4 5 6 COLLECTOR CURRENT Ig (mA) COLLECTOR-EMITTER VOLTAGE Vog (V) °
3 VCE (sat) — Ic 1000 Ic — VBE
; COIs) (of oe SSeS 2. Sao = 900) Vor=tv FY Bp op 2 Lf a9 TH ea S (=== == ASS = ee al eens ee BE === SEE = SS Emil 2 oe 8 oot Lilli TUTE | TTI ee ° oon 3 10 30 100 300 1000 0 02 04 06 0.8 1.0 12 COLLECTOR CURRENT Ig (mA) BASE-EMITTER VOLTAGE Vpr (V) Po - Ta meLtLITLTLtLt Nee € we tLNIT TTT TT yt e LTTE NTTTTTT Te 2 ft EEN EE ge TLTTTINIT TTT er Ne BP EEEEEEEE SH g 8 40. Nee 8 ogili ti titi TN || 0 25 50 uty 100 125 150-175 AMBIENT TEMPERATURE Ta (°C) 1998-12-04 2/2