2SC4209 TOSHIBA
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 3
Technical content
TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS) DRIVER STAGE AMPLIFIER APPLICATIONS Unit in mm VOLTAGE AMPLIFIER APPLICATIONS sos 25-03 +025 i.5-0.15. 4 @ Complementary to 2SA1620 FH ss a4 < 4 2t | o a | BF MAXIMUM RATINGS (Ta = 25°C) 3 |_| 3 cH CHARACTERISTIC SYMBOL | RATING | UNIT ZT Collector Base Voltage Von _|_80 |v 3-3 Collector-Emitter Voltage Vero | 80 | Vi || gs cai Emitter-Base Voltage Vepo | 5 | V_ | 3| Collector Current [ie [300 | ma] : [Base Current | Tm g Storage Temperature Range —55~150 3. COLLECTOR JEDEC _TO-236MOD EIAJ SC-59 MARKING TOSHIBA _2-3F1A Type N - _ ype Name Weight : 0.012g o hrg Rank @ TOSHIBA is continually working to improve the quality and the reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to observe standards of safety, and to avoid situations in which a malfunction or failure of a TOSHIBA product could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent products specifications. Also, please keep in mind the precautions and conditions set forth in the TOSHIBA Semiconductor Reliability Handbook. @ The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed. by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. @ The information contained herein is subject to change without notice. 1998-12-17 1/3
ELECTRICAL CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC SYMBOL TEST CONDITION Collector Cutoff Canrent | Teno [Von=50V, g=0 | — | — | oa | a | Emitter Cut-off Current | Igo |VEB=5V, Ig=0 | — | — | 0a | pA | Collector-Emitter Breakdown hFE (1) VoE=2V, Ic=50mA 70 240 DC Current Gain (Note) cE Te=s Collector-Emitter Saturation vr fesmonieerms [|= [wo] 0 Top=aVIg= ima Loss| — [oa] Transition Frequency | tp | Von=10V, Ig=i0mA | — | 100] — | Mia] Vop=i0V, Ip=0, f=iMiz | — | 10] — | oF | (Note) : hyp (1) Classification 0: 70~140, Y : 120~240 1998-12-17 2/3
TOSHIBA 2$C4209 Ic - VCE hre - Ic
32077 TT] 1000 -—
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ro W/L rrr ——— eS
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1 VCE (sat) — Ic 300 Ic — VBE
FEBS common earner TT TTT TTT] common BH grins 2 CECE HOUL emer [ig a = 250] Vor=2V a of) rr 6 LEE TTT Tf vee es {| |UUMM TT Ca 2 of LETT TT TT TT Be L | | [| imate | [UM e LITT E Pp ty Ee oS re | 2 so LTT ET TT E eer 5 ST Tacos! Ios! | 11 BS osha — £ i as 0.05} 8 rool Lt | PP Titty 23 oof i 8B LETTE PTT Ty ee] Ee 3 ot LETTE 8 ot LUMI TTT | | 5 EEL TT] 0.01 1 3 5 10 8050100800 2 ra 06 08 10 12 14 16 COLLECTOR CURRENT Ic (mA) BASE-EMITTER VOLTAGE Vg (V) Po - Ta meLtLITLTLtLt Nee 2 ee NS eee é [LITTINE TTT ETT 2 ft EEN EE ee LITITIN ITT er Ne 2 [ITT TTTITN TTT E ot ti TTT TEN TTY ee NN 8 ogili ti titi TN || 0 25 50 WEY 100 125 150 175 AMBIENT TEMPERATURE Ta (°C) 4998-12-17 3/3