2SC4208 PANASONIC

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2SC4208, 2SC4208A Silicon NPN epitaxial planer type For low-frequency output amplification and driver amplification Complementary to 2SA1619 and 2SA1619A n Features l Low collector to emitter saturation voltage VCE(sat). l Output of 1W is obtained with a complementary pair with 2SA1619 and 2SA1619A. l Allowing supply with the radial taping. n Absolute Maximum Ratings (Ta=25˚C) Unit: mm Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature 1:Emitter 2:Collector 3:Base TO–92NL Package 5.0–0.2 13.5–0.5 0.7–0.2 8.0–0.2 1.27 123 1.27 4.0–0.2 0.45 +0.15 –0.10.45 +0.15 –0.1 2.3–0.2 0.7–0.1 2.54–0.15 Symbol V CBO V CEO V EBO ICP IC PC Tj Tstg Ratings 500 150 –55 ~ +150 Unit V V V A mA W 2SC4208 2SC4208A 2SC4208 2SC4208A n Electrical Characteristics (Ta=25˚C) Parameter Collector cutoff current Collector to base voltage Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Collector output capacitance Symbol I CBO V CBO V CEO V EBO hFE1 *1 hFE2 V CE(sat) V BE(sat) fT C ob Conditions V CB = 20V , IE = 0 IC = 10mA, IE = 0 IC = 10mA, IB = 0 IE = 10mA, IC = 0 V CE = 10V , IC = 150mA*2 V CE = 10V , IB = 500mA*2 IC = 300mA, IB = 30mA IC = 300mA, IB = 30mA V CB = 10V , IE = –50mA, f = 200MHz V CB = 10V , IE = 0, f = 1MHz min typ 0.35 1.1 150 max 0.1 340 0.6 1.5 Unit mA V V V V V MHz pF *1hFE1 Rank classification Rank Q R S hFE1 85 ~ 170 120 ~ 240 170 ~ 340 *2 Pulse measurement 2SC4208 2SC4208A 2SC4208 2SC4208A

Transistor 2SC4208, 2SC4208A PC — Ta I C — V CE IC — IB V CE(sat) — IC V BE(sat) — IC hFE — IC fT — IE C ob — V CB V CER — R BE 0 160 40 120 80 14020 100 60 1.2 1.0 0.8 0.6 0.4 0.2 Ambient temperature Ta (˚C) Collector power dissipation PC (W ) 02 0 1641 2 8 800 600 200 500 700 400 100 300 Ta=25˚C IB=10mA 9mA 8mA 7mA 6mA 5mA 4mA 3mA 2mA 1mA Collector to emitter voltage VCE (V) Collector current IC (mA ) 01 0 826 4 800 600 200 500 700 400 100 300 VCE =10V Ta=25˚C Base current IB (mA ) Collector current IC (mA ) 0.01 0.1 1 100.03 0.3 3 0.01 0.03 0.1 0.3

100 IC /IB=10

Ta=75˚C 25˚C –25˚C Collector current IC (A) Collector to emitter saturation voltage VCE(sat) (V) 0.01 0.1 1 100.03 0.3 3 0.01 0.03 0.1 0.3 Ta=75˚C –25˚C 25˚C Collector current IC (A) Base to emitter saturation voltage VBE(sat) (V) 0.01 0.1 1 100.03 0.3 3 300 250 200 150 100 VCE =10V Ta=75˚C 25˚C –25˚C Collector current IC (A) Forward current transfer ratio hFE 240 200 160 120 VCB =10V Ta=25˚C Emitter current IE (mA ) Transition frequency fT (MHz ) 1 3 10 30 100 IE=0 f=1MHz Ta=25˚C Collector to base voltage VCB (V) Collector output capacitance Cob (pF) 1 10 100 10003 30 300 120 100 IC =2mA Ta=25˚C 2SA4208A 2SA4208 Base to emitter resistance RBE (kW ) Collector to emitter voltage VCER (V)

Transistor 2SC4208, 2SC4208A ICEO — Ta Area of safe operation (ASO) 0 200 16040 120 80 102 103 104 VCE =10V Ambient temperature Ta (˚C) ICEO (Ta) ICEO (Ta=25˚C) 0.1 1 10 1000.3 3 30 0.001 0.003 0.01 0.03 0.1 0.3

10 Single pulse

Ta=25˚C t=10ms 2SC4208A 2SC4208 t=1s DC ICP IC Collector to emitter voltage VCE (V) Collector current IC (A)