2SC4204 SANYO
Document overview
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Technical content
Features
+ |Adoption of MBIT process « ‘High DC current gain (hp,=800 to 3200) | . ‘Large current capacity TE ,s0.78) . - ‘Low collector to emitter saturation voltage (Vor (sat)$°-5¥) + High Vigo (Vgpo2 15V) Absolute Maximum Ratings at Ta=25°C unit | —-Collector-to -Base-Voltage --- Vego - 30° --¥ " Collector to Emitter Voltage Vero . 25 v Emitter to Base Voltage Vepo 15 v Collector Current Ic 10.7 A Collector Current(Pulse) Iop 14.5 A Collector Dissipation Po 10.6 W Junction Temperature Tj 150 °C Storage Temperature Tstg -55 to +150 °C Electrical Characteristics at Ta=25°C : min. typ max unit Collector Cutoff Current pg Vop=20V,Ip=0 0.1 BA Emitter Cutoff Current Tepo Vppe10V,Ip=0 0.1. “A “DC Current’ Gain" peg Vege 5V, Tge50ma 800 1500 3200 hepa —-Vog#5V, T=500mA 600 Gain-Bandwidth Product fr Voge 10V,1,=50mA 270 MHz Output Capacitance Cop Vope10V, f= 1MHz 9 pF C-E Saturation Voltage Vor(sat) To=500mA , Ip=10mA 0.15 0.50 v B-E Saturation Voltage Ver(sat) To=500mA ,Ip=10mA 0.9 1.2 Vv C-B Breakdown Voltage VBR) CBO T2104, Ip=0 30 Vv C-E Breakdown Voltage VpR)CEO Zc= IAs Rpg=oo 25 v E=B Breakdown Voltage V(BR)EBO Ty=10-,1 =0 15 v Turn-on Time ton See Epecified Test Circuit. 0.1 a) Storage Time tstg " | 0.6 4S Fall Time te Ld 0.06 uS ‘Switching Time Test Circuit Package Dimensions 2003A : PW=20,s,dutys1% (unit: mm) FL gt py 2 ou , Te) 048 t Sle -— 3s) 01 ys iL 2 § mp 77 470y) 0.65 (| sv wv beso 0 _] Le 100 tp} = 100 Ip2= ic =300mA JEDEC: TO-92 B. Base Unit(Resistance: 2, Capacitance: F) EIAJ : sC~43 C. Collector | ' SANYO: NP E. Fmitter SANYO Electric Co.,Ltd. Semiconductor Business Headquarters TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110 JAPAN . : 4231MH,4217TA,TS No.2531~—1/3
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Pc - Ta . ASO FA 4 TT TT rr 1 600 Fog te tT NENT, & NX 1 gee TT TTT | % N o gE RIT TTT’ NTT SO ASCOT TS NT 2 cool N pitt TNO UT NATE & || I ne E fice oan a AS 4 300 N Bot | Tt thse J Pi BC OCPNCCE) PEERS & 200] N 8 oT TP we &. fa A GS OS 3 q a a sy i 383i, Pr NT eT ca 0 a. °, . 1 10 Ambient Temperature,Ta ~ °C Collector to Emitter Voltage,Vog - V IE No products described or contained herein are intended for use in surgical implants, life-support systems, aerospace equipment, nuclear power control systems, vehicles, disaster/crime-prevention equipment and the like, the failure of which may directly or indirectly cause injury, death or property loss. WM Anyone purchasing any products described or contained herein for an above-mentioned use shall: ® Accept full responsibility and indemnify and defend SANYO ELECTRIC CO, LTD, its affiliates, subsidiaries and distributors and alt their officers and employees, jointly and severally, against any and all claims and litigation and all damages, cost and expenses associated with such use: ® Not impose any responsibility for any fault or negligence which may be cited in any such claim or litigation on SANYO ELECTRIC CO, LTD, its affiliates, subsidiaries and distributors or any of their officers and employees jointly or severally. MM Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guarant- eed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties, ce No. 2531-3/3