2SC4177-L4 AITSEMI

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AiT Semiconductor Inc. www.ait-ic.com 2SC4177 GENERAL PURPOSE TRANSISTOR NPN TRANSISTOR REV1.0 - AUG 2016 RELEASED - - 1 - DESCRIPTION FEATURES The 2SC4177 is available in SC-70 package  High DC Current Gain  Complementary to 2SA1611  High Voltage  Available in SC-70 package ORDERING INFORMATION APPLICATIONS Package Type Part Number SC-70 2SC4177-LX Note LX: hFE X: 4~7 Please refer to page 2 SPQ: 3,000pcs/Reel AiT provides all RoHS Compliant Products  General Purpose Amplification PIN DESCRIPTION 1. BASE 2. EMITTER 3. COLLECTOR

AiT Semiconductor Inc. www.ait-ic.com 2SC4177 GENERAL PURPOSE TRANSISTOR NPN TRANSISTOR REV1.0 - AUG 2016 RELEASED - - 2 - ABSOLUTE MAXIMUM RATINGS TA=25°C, unless otherwise noted VCBO, Collector-Base Voltage 60V VCEO, Collector-Emitter Voltage 50V VEBO, Emitter-Base Voltage 5V IC, Collector Current 100mA PC, Collector Power Dissipation 150mW RθJA, Thermal Resistance from Junction to Ambient 833°C/W TJ, Junction Temperature 150°C TSTG, Storage Temperature -55°C ~150°C Stresses above may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other conditions beyond those indicated in the Electrical Characteristics are not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.

ELECTRICAL CHARACTERISTICS

TA=25°C, unless otherwise noted Parameter Symbol Conditions Min. Typ. Max. Unit Collector-Base Breakdown Voltage V(BR)CBO IC= 100μA, IE=0 60 - - V Collector-Emitter Breakdown Voltage V(BR)CEO IC=1mA, IB=0 50 - - V Emitter-Base Breakdown Voltage V(BR)EBO IE=100μA,IC=0 5 - - V Collector Cut-Off Current ICBO VCB=60V, IE=0 - - 100 nA Emitter Cut-Off Current IEBO VEB=5V, IC=0 - - 100 nA DC Current Gain hFE VCE=6V, IC=1mA L4 90 - 180 L5 135 - 270 L6 200 - 400 L7 300 - 600 Collector- Emitter Saturation Voltage VCE(sat) IC=100mA, IB=10mA - - 0.3 V Base-Emitter Saturation Voltage VBE(sat) IC=100mA, IB=10mA - - 1 V Base-Emitter Voltage VBE VCE=6V, IC=1mA 0.55 - 0.65 V Transition Frequency fT VCE=6V, IC=10mA - 250 - MHz Collector Output Capacitance Cob VCB=6V, IE=0, f=1MHz - 3 - pF NOTE: Pulse test; pulse width≤350μs, duty cycle≤2.0%.

Figure 7. PC － TA

AiT Semiconductor Inc. www.ait-ic.com 2SC4177 GENERAL PURPOSE TRANSISTOR NPN TRANSISTOR REV1.0 - AUG 2016 RELEASED - - 5 -

PACKAGE INFORMATION

Dimension in SC-70 (Unit: mm) DIM MILLIMETERS INCHES MIN MAX MIN MAX A 0.900 1.100 0.035 0.043 A1 0.000 0.100 0.000 0.004 A2 0.900 1.000 0.035 0.039 b 0.200 0.400 0.008 0.016 c 0.080 0.150 0.003 0.006 D 2.000 2.200 0.079 0.087 E 1.150 1.350 0.045 0.053 E1 2.150 2.450 0.082 0.096 e 0.650 TYP. 0.026 TYP. e1 1.200 1.400 0.047 0.055 L 0.525 REF. 0.021 REF. L1 0.260 0.460 0.010 0.018 θ 0° 8° 0° 8°

AiT Semiconductor Inc. www.ait-ic.com 2SC4177 GENERAL PURPOSE TRANSISTOR NPN TRANSISTOR REV1.0 - AUG 2016 RELEASED - - 6 - IMPORTANT NOTICE AiT Semiconductor Inc. (AiT) reserves the right to make changes to any its product, specifications, to discontinue any integrated circuit product or service without notice, and advises its customers to ob tain the latest version of relevant information to verify, before placing orders, that the information being relied on is current. AiT Semiconductor Inc. 's integrated circuit products are not designed, intended, authorized, or warranted to be suitable for use in life support applications, devices or systems or other critical applications. Use of AiT products in such applications is understood to be fully at the risk of the customer. As used herein may involve potential risks of death, personal injury, or s ervere property, or environmental damage. In order to minimize risks associated with the customer's applications, the customer should provide adequate design and operating safeguards. AiT Semiconductor Inc . assumes to no liability to customer product desi gn or application support. AiT warrants the performance of its products of the specifications applicable at the time of sale.