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Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching n Features l High-speed switching l High collector to base voltage VCBO l Wide area of safe operation (ASO) l Satisfactory linearity of foward current transfer ratio hFE l Full-pack package which can be installed to the heat sink with one screw n Absolute Maximum Ratings (TC =25˚C) Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol V CBO V CER V CEO V EBO ICP IC PC Tj Tstg Ratings 1400 1400 700 1.0 0.3 150 –55 to +150 Unit V V V V A A W TC =25°C Ta=25°C n Electrical Characteristics (TC =25˚C) Parameter Collector cutoff current Emitter cutoff current Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Collector output capacitance Turn-on time Storage time Fall time Symbol I CBO IEBO V CER V CEO V EBO hFE V CE(sat) V BE(sat) fT C ob ton tstg tf Conditions V CB = 1100V , IE = 0 V EB = 4V , IC = 0 IC = 1mA, RBE = 100W IC = 1mA, IB = 0 IE = 1mA, IC = 0 V CE = 5V , IC = 30mA IC = 60mA, IB = 6mA IC = 60mA, IB = 6mA V CE = 10V , IC = 30mA, f = 1MHz V CB = 100V , IE = 0, f = 1MHz IC = 0.15A, IB1 = 15mA, IB2 = –30mA, V CC = 250V min 1400 700 typ max Unit mA mA V V V V V MHz pF ms ms ms Unit: mm 1:Base 2:Collector 3:Emitter TO–220 Full Pack Package(a) 10.0–0.2 5.5–0.2 7.5–0.2 16.7–0.3 0.7–0.1 14.0–0.5 Solder Dip 4.0 0.5 +0.2 –0.1 1.4–0.1 1.3–0.2 0.8–0.1 2.54–0.25 5.08–0.5 213 2.7–0.2 4.2–0.2 4.2–0.2 f3.1–0.1
PC —T a I C —V CE V CE(sat)—I C V BE(sat)—I C hFE —I C fT —I C C ob —V CB ton, tstg, tf — IC Area of safe operation (ASO) 0 160 40 120 80 14020 100 60 20 (1) (3) (4) (2) (1) TC =Ta (2) With a 100 · 100 · 2mm Al heat sink (3) With a 50 · 50 · 2mm Al heat sink (4) Without heat sink (PC =2W) Ambient temperature Ta (˚C) Collector power dissipation PC (W ) 01 2 10826 4 120 100 TC =25˚C 1mA 2mA 3mA 4mA IB=5mA Collector to emitter voltage VCE (V) Collector current IC (A) 0.01 0.03 0.1 0.3 100 IC /IB=10 –25˚C 25˚C TC =100˚C Collector current IC (A) Collector to emitter saturation voltage VCE(sat) (V) 0.1 100 0.3 IC /IB=10 TC =–25˚C 25˚C 100˚C Collector current IC (A) Base to emitter saturation voltage VBE(sat) (V) 1000 100 300 VCE =5V TC =100˚C –25˚C 25˚C Collector current IC (A) Forward current transfer ratio hFE 1000 100 300 VCE =10V f=1MHz T C =25˚C Collector current IC (A) Transition frequency fT (MHz ) 1 3 10 30 100 1000 100 300 IE=0 f=1MHz T C =25˚C Collector to base voltage VCB (V) Collector output capacitance Cob (pF) 0 0.8 0.2 0.6 0.4 0.01 0.03 0.1 0.3 100 tstg tf ton Pulsed tw =1ms Duty cycle=1% I C /IB=5 (2IB1=–IB2) VCC =250V TC =25˚C Collector current IC (A) Switching time ton,tstg,tf (ms) 1 10 100 10003 30 300 0.001 0.003 0.01 0.03 0.1 0.3 Non repetitive pulse TC =25˚C DC 10ms t=1ms Collector to emitter voltage VCE (V) Collector current IC (A)
Area of safe operation, reverse bias ASO Reverse bias ASO measuring circuit R th(t)—t 10–4 1010–3 10–110–2 11 0 3102 104 0.1 100 10000 1000 Note: Rth was measured at Ta=25˚C and under natural convection. (1) PT=10V · 0.2A (2W) and without heat sink (2) PT=10V · 1.0A (10W) and with a 100 · 100 · 2mm Al heat sink (1) (2) Time t (s) Thermal resistance Rth(t) (˚C/W) 0 1600400 1200800 1400200 1000600 1.6 1.2 0.4 1.0 1.4 0.8 0.2 0.6 Lcoil=200µH IC /IB=10 (IB1=–IB2) TC =25˚C ICP <1mA IC Collector to emitter voltage VCE (V) Collector current IC (A) L coil ICIB1 Vin tW –IB2 Vclamp VCC T.U.T