2SC4131 ISC
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 2
Technical content
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC4131
DESCRIPTION
- Collector-Emitter Breakdown Voltage- : V (BR)CEO= 50V(Min)
- Low Collector Saturation Voltage- : V CE(sat)= 0.5V(Max)@ IC= 5A
APPLICATIONS
- Designed for DC-DC converter, emergency lighting inverter and general purpose applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 15 V IC Collector Current-Continuous 15 A ICP Collector Current-Peak 25 A IB B Base Current-Continuous 4 A PC Collector Power Dissipation @ TC=25℃ 60 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc Website：www.iscsemi.cn
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC4131
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 25mA; IB= 0 50 V VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 80mA B 0.5 V VBE(sat) Base-Emitter Saturation Voltage IC= 5A; IB= 80mA B 1.2 V ICBO Collector Cutoff Current VCB= 100V ; IE= 0 10 μA IEBO Emitter Cutoff Current VEB= 15V ; IC= 0 10 μA hFE DC current gain IC= 5A ; VCE= 1V 60 360 fT Current-Gain—Bandwidth Product IE= -1A ; VCE= 12V 18 MHz COB Output Capacitance IE=0 ; VCB= 10V; ftest= 1.0MHz 210 pF Switching times ton Turn-on Time 0.5 μs tstg Storage Time 2.0 μs tf Fall Time IC= 5A , IB1= 80mA; IB2= -80mA RL= 4Ω; VCC= 20V 0.4 μs isc Website：www.iscsemi.cn 2