2SC4130 ISC

Document overview

  • Manufacturer or author: Provided By digicamel.com
  • PDF pages: 4

Technical content

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4130

DESCRIPTION

  • With TO-220F package
  • High voltage.
  • High speed switching

APPLICATIONS

  • For switching regulator and general purpose applications PINNING PIN DESCRIPTION

1 Base

2 Collector

3 Emitter

Absolute maximum ratings (Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 500 V VCEO Collector-emitter voltage Open base 400 V VEBO Emitter-base voltage Open collector 10 V IC Collector current 7 A ICM Collector current-peak 14 A PC Collector dissipation T C=25℃ 30 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ Fig.1 simplified outline (TO-220F) and symbol

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4130 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage I C=25mA ; IB=0 400 V VCEsat Collector-emitter saturation voltage I C=3A ;IB=0.6A 0.5 V VBEsat Base-emitter saturation voltage I C=3A ;IB=0.6A 1.3 V ICBO Collector cut-off current V CB=500V; IE=0 100 μA IEBO Emitter cut-off current V EB=10V; IC=0 100 μA hFE DC current gain I C=3A ; VCE=4V 10 30 COB Output capacitance I E=0; VCB=10V;f=1MHz 50 pF fT Transition frequency I E=-0.5A ; VCE=12V 15 MHz Switching times ton Turn-on time 1.0 μs ts Storage time 2.2 μs tf Fall time IC=3A; IB1=0.3A IB2=-0.6A VCC=200V ,RL=67Ω 0.5 μs

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4130 PACKAGE OUTLINE Fig.2 Outline dimensions

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4130