2SC4124 SANYO

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Technical content

Features

+ Adoption of MBIT process + On-chip damper diode - High breakdown voltage (Vcopo = 1500V) - High speed (tp=100ns typ.) - High reliability (Adoption of HVP process) Absolute Maximum Ratings at Ta=25°C unit Collector to Base Voltage Vcpo 1500 Vv Collector to Emitter Voltage Voro 800 v Emitter to Base Voltage VEBo 6 v Collector Current Ic 8 A Peak Collector Current igp 25 A Collector Dissipation Po 3 Ww Te=25°C 70 2OW Junction Temperature Tj 150 °C Storage Temperature Tstg —55to+150 °C Electrical Characteristics at Ta= 25°C min typ max unit Collector Cutoff Current Icpo Vcop=800V,Ig=0 10 pA Collector Cutoff Current Ices Vce=1500V,Rpr=0 1 mA Collector Sustain Voltage Voro(eus) I¢=100mA,Ip=0 800 v Emitter Cutoff Current IEBo Vep=4V,Ic=0 40 130 mA C-E Saturation Voltage Venat) Ic=6A,Ip=1.5A 5 Vv B-E Saturation Voltage Veptat) Ic¢=6A,Ip=1.5A 150 =OV DC Current Gain hpg(1) Vor=5V,Ig=1A 8 hpg(2) Vee=5V,I¢=6A 4 6 Diode Forward Voltage VF Tgc=8A 2 Vv Storage Time tetg (‘s =6A,Ip1 =1.2A 3 ops Fall Time tr Ipg=—2.4A 01 0.2 ps Switching Time Test Circuit Package Dimensions 2039 PW=20us (unit: mm) no me = OC 51% » bee oF ° 35 x . a weuF mF Re i | AI _ fee ° H a ae E: Emitter rh & N00 J 470 : Collector Vee=—5V Voo=200V . B: Base SANYO Electric Co.,Ltd. Semicoriductor Business Headquarters TOKYO OFFICE Tokyo Bldg.,1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110 JAPAN 9149MO,TS No.2962-1/3

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Po — Ta Pc — Ta wT TTT) oe err ee RT IN TET be LL oT TT] UfeENU e ' t e nl i i 8 50) %& S 20+ E % i eer P| Tas <a gyi | Ne 1.0 — 5 3 So N PtP PP PN . | ae a ° aN gp tpi osS Ambient Temperature,Ta — °C . Ambient Temperature,Ta — °C BI No products described or contained herein are intended for use in surgical implants, life-support systems, aerospace equipment, nuclear power control systems, vehicles, disaster/crime-prevention equipment and the like, the failure of which may directly or indirectly cause injury, death or property loss. WM Anyone purchasing any products described or contained herein for an above-mentioned use shall: © Accept full responsibility and indemnify and defend SANYO ELECTRIC CO., LTO., its affiliates, subsidiaries and distributors and all their officers and employees, jointly and severally, against any and all claims and litigation and all damages, cost and expenses associated with such use: @® Not impose any responsibility for any fault or negligence which may be cited in any such claim or litigation on SANYO ELECTRIC CO, LTD, its affiliates, subsidiaries and distributors or any of their officers and employees jointly or severally. Wi Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guarant- eed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties, No.2962-3/3