2SC4123 ISC
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 4
Technical content
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4123 DESCRIPTION ·
- With TO-3PML package
- High breakdown voltage, high reliability.
- High speed
- Built in damper diode
APPLICATIONS
- Ultrahigh-definition CRT display
- Horizontal deflection output applications PINNING PIN DESCRIPTION
1 Base
2 Collector
3 Emitter
Maximum absolute ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 1500 V VCEO Collector-emitter voltage Open base 800 V VEBO Emitter-base voltage Open collector 6 V IC Collector current 7 A ICM Collector current-peak 16 A TC=25℃ 60 W PC Collector power dissipation 3 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ Fig.1 simplified outline (TO-3PML) and symbol
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4123 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEsat Collector-emitter saturation voltage I C=5A;IB=1.2 A 5 V VBEsat Base-emitter saturation voltage I C=5A;IB=1.2 A 1.5 V VCEO(SUS) Collector-emitter sustaining voltage I C=100mA;IB=0 800 V IEBO Emitter cut-off current V EB=4V; IC=0 40 130 mA ICBO Collector cut-off current V CB=800V; IE=0 10 μA ICES Collector cut-off current V CE=1500V; RBE=0 1 mA hFE-1 DC current gain I C=1 A ; VCE=5V 8 hFE-2 DC current gain I C=5A ; VCE=5V 4 6 VF Diode forward voltage I EC=7A 2.0 V Switching times tstg Storage time 3.0 μs tf Fall time IC=5A;RL=33.3Ω IB1=1A;- IB2=2A VCC=200V 0.1 0.2 μs
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4123 PACKAGE OUTLINE Fig.2 Outline dimensions
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4123