2SC4113 SANYO
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i ish eacy PNP/ NPN Epitaxial Planar Silicon Transistors 3 ey Switching Applications Le ‘es (with Bias Resistance) Applications ae ee Np fe . Switching circuit, inverter circuit, interface circuit, dpivergcireuit Features ff, > ee . On-chip bias resistance (Rj =2.2k9,R,=~) of _~ ) fe . Small-sized package (SPA) ié ew fé ( ): 2841582 ff PO af Absolute Maximum Ratings at Ta=25°C ff a “sh ff unit. Collector to Base Voltage Vono re ae Olen! Collector to Emitter Voltage Vop9 fe fo Weal (2)50 v Emitter to Base Voltage Veco’ ye OV Collector Current Ig ff S&™%& *(£)100 soma Collector Current (Pulse) Iop ff 200 mA Collector Dissipation Po fs “Sa, Oe 300 ow Junction Temperature TH 4/ ge Of 150 °C Storage Temperature Tete & sy ee) to +150 % Electrical Characteristics at Tax25°C™ & ~~ of min typ max unit Collector Cutoff Current Iggy” —_aVcpe( HOV, T,40 (-)0.1 #A Emitter Cutoff Current Ipaq Vgp-(2)5v, 1,60 {-)0.1 WA DC Current Gain ge Oe cee(-) 5¥iT¢=(~) 10ma 100 Gain-Bandwidth Product .° ofp “Ny, Vege (-),10V, Tes (-) 5mA 250 MHz ff @eem 4 (200) Output Capacitance CSB Ny, Vope hs) 10V,f=1MHz 3.7 pF C-E Saturation Voltage <Vei¢sat) E¢=¢-) 10mA,Tp=(-)0.5mA (-)0.1(-)0.3 Vv C-B Breakdown Vortage “V(ppjopo A¢=(-) 104A, Tg=0 (-)50 v C-E Breakdown VoltageisenV ge) cag Zc=(-) 100. A, Kpp=co (-)50 v Input OFF-State’ Voltag®=Vr( orp). Von (-)5V, Tg (=) 100A (-)0.4(-)0.55(-)0.8 Input ON-State’ Volbage’, “Ve(on)! Voge(-)0.2V,Ig=10mA (0.6 (-)0.8(-)1.5 V Input Resistance “\\, 5 Rt oe 1.5 2.2 2.9 ka Electrical’ Connection Case Outline 2033 ae a 2 CNET RAINES) 1 = We Re | oF 3 Oe vo B: Base Roe C: Collector ENS fone’) Br Emitter SANYO: SPA 28A1582 (PNP) 28C4113(NPRD Specifications and information herein: are subject to change without notice. SANYO Electric Co.,Ltd. Semiconductor Business Headquarters TOKYO OFFICE Tokyo 8itig., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110 JAPAN 410TTA,TS No. 2505-1/2
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