2SC4111 ISC
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 4
Technical content
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2 S C 4 1 1 1
DESCRIPTION
- With TO-3PL package
- High voltage ,high speed
- Wide area of safe operation
APPLICATIONS
- For horizontal deflection output application PINNING PIN DESCRIPTION
1 Base
2 Collector;connected to
3 Emitter
Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 1500 V VCEO Collector-emitter voltage Open base 700 V VEBO Emitter-base voltage Open collector 7 V IC Collector current 10 A ICM Collector current-peak 22 A IB Base current 3.5 A Ta=25℃ 3.5 PC Collector power dissipation TC=25℃ 150 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ Fig.1 simplified outline (TO-3PL) and symbol
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2 S C 4 1 1 1 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)EBO Eemitter-base breakdown voltage I E=1mA ;IC=0 7 V VCEsat Collector-emitter saturation voltage I C=7A ;IB=2.5A 5.0 V VBEsat Base-emitter saturation voltage I C=7A ;IB=2.5A 1.5 V VCB=750V; IE=0 10 μA ICBO Collector cut-off current VCB=1500V; IE=0 1 mA hFE-1 DC current gain I C=1A ; VCE=5V 5 hFE-2 DC current gain I C=7A ; VCE=5V 3 8 fT Transition frequency I C=1A ; VCE=10V;f=0.5MHz 2 MHz Switching times ts Storage time 12 μs tf Fall time IC=6A ;IB1=-IB2=1.7A LLeak=5μH 0.6 μs
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2 S C 4 1 1 1 PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.50 mm)
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4111