2SC4111 PANASONIC
Document overview
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Technical content
Silicon NPN triple diffusion planar type For horizontal deflection output n Features l High-speed switching l High collector to base voltage VCBO l Wide area of safe operation (ASO) l Satisfactory linearity of foward current transfer ratio hFE n Absolute Maximum Ratings (TC =25˚C) Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Base current Collector power dissipation Junction temperature Storage temperature Symbol V CBO V CES V CEO V EBO ICP IC IB PC Tj Tstg Ratings 1500 1500 700 3.5 150 3.5 150 –55 to +150 Unit V V V V A A A W TC =25°C Ta=25°C n Electrical Characteristics (TC =25˚C) Parameter Collector cutoff current Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Storage time Fall time Symbol ICBO V EBO hFE1 hFE2 V CE(sat) V BE(sat) fT tstg tf Conditions V CB = 750V, IE = 0 V CB = 1500V , IE = 0 IC = 1mA, IB = 0 V CE = 5V , IC = 1A V CE = 5V , IC = 7A IC = 7A, IB = 2.5A IC = 7A, IB = 2.5A V CE = 10V , IC = 1A, f = 0.5MHz IC = 6A, Lleak = 5mH, IB1 = 1.7A, IB2 = –1.7A min typ max 1.5 0.6 Unit mA mA V V V MHz ms ms Unit: mm 1:Base 2:Collector 3:Emitter TOP–3L Package 20.0–0.5 6.010.0 26.0–0.520.0–0.5 1.52.5 Solder Dip 10.9–0.5 123 2.0–0.3 3.0–0.3 1.0–0.2 5.0–0.3 3.0 4.02.0 5.45–0.3 0.6–0.2 1.5 2.7–0.3 1.5 2.0 f 3.3–0.2 3.0
PC —T a I C —V CE V CE(sat)—I C V BE(sat)—I C hFE —I C fT —I C C ob —V CB Area of safe operation (ASO) Area of safe operation, horizontal operation ASO 0 160 40 120 80 14020 100 60 200 150 100 (1) (3)(2) (1) TC =Ta (2) With a 100 · 100 · 2mm Al heat sink (3) With a 50 · 50 · 2mm Al heat sink Ambient temperature Ta (˚C) Collector power dissipation PC (W ) 01 2 10826 4 TC =25˚C 0.1A 0.05A 0.2A 0.5A 0.7A IB=2A Collector to emitter voltage VCE (V) Collector current IC (A) 0.01 0.1 1 100.03 0.3 3 0.01 0.03 0.1 0.3 100 IC /IB=2.8 –25˚C 25˚C TC =100˚C Collector current IC (A) Collector to emitter saturation voltage VCE(sat) (V) 0.01 0.1 1 100.03 0.3 3 0.1 100 0.3 IC /IB=2.8 TC =–25˚C 25˚C 100˚C Collector current IC (A) Base to emitter saturation voltage VBE(sat) (V) 0.01 0.1 1 100.03 0.3 3 1000 100 300 VCE =5V TC =100˚C –25˚C 25˚C Collector current IC (A) Forward current transfer ratio hFE 0.01 0.1 1 100.03 0.3 3 0.1 100 0.3 VCE =10V f=0.5MHz T C =25˚C Collector current IC (A) Transition frequency fT (MHz ) 1 3 10 30 100 10000 1000 100 300 3000 IE=0 f=1MHz T C =25˚C Collector to base voltage VCB (V) Collector output capacitance Cob (pF) 1 10 100 10003 30 300 0.01 0.03 0.1 0.3 100 Non repetitive pulse TC =25˚CICP IC DC 10ms t=1ms Collector to emitter voltage VCE (V) Collector current IC (A) 0 1600400 1200800 1400200 1000600 ICP <1mA f=15.75kHz, TC =25˚C Area of safe operation for the single pulse load curve due to discharge in the high-voltage rectifier tube during horizontal operation Collector to emitter voltage VCE (V) Collector current IC (A)
R th(t)—t 10–4 1010–3 10–110–2 11 0 3102 104 0.1 100 10000 1000 Note: Rth was measured at Ta=25˚C and under natural convection. (1) PT=10V · 0.3A (3W) and without heat sink (2) PT=10V · 1.0A (10W) and with a 100 · 100 · 2mm Al heat sink (1) (2) Time t (s) Thermal resistance Rth(t) (˚C/W)