2SC4110 ISC
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 2
Technical content
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC4110
DESCRIPTION
- High Collector-Emitter Breakdown Voltage- : V (BR)CEO= 400V(Min)
- High Switching Speed
- Wide Area of Safe Operation
APPLICATIONS
- Designed for switching regulator and general purpose applications. ABSOLUTE MAXIMUM RATINGS(T a=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 500 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base voltage 7 V IC Collector Current-Continuous 25 A ICM Collector Current-Peak 40 A IB B Base Current-Continuous 8 A Collector Power Dissipation @ TC=25℃ 160 PC Collector Power Dissipation @ Ta=25℃ 2.5 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc Website：www.iscsemi.cn
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC4110
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA; IE= 0 500 V V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; RBE= ∞ 400 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 1m A; IC= 0 7 V VCE(sat) Collector-Emitter Saturation Voltage IC= 16A; IB= 3.2A 0.8 V VBE(sat) Base-Emitter Saturation Voltage IC= 16A; IB= 3.2A 1.5 V ICBO Collector Cutoff Current VCB= 400V ; IE= 0 10 μA IEBO Emitter Cutoff Current VEB= 5V; IC= 0 10 μA hFE-1 DC Current Gain IC= 3.2A ; VCE= 5V 15 50 hFE-2 DC Current Gain IC= 16A ; VCE= 5V 10 hFE-3 DC Current Gain IC= 10mA ; VCE= 5V 10 fT Current-Gain—Bandwidth Product IC= 3.2A ; VCE= 10V 20 MHz COB Output Capacitance IE= 0; VCB= 10V; ftest= 1.0MHz 300 pF Switching Times ton Turn-on Time 0.5 μs tstg Storage Time 2.5 μs tf Fall Time IC= 20A, IB1= 4A; IB2= -8A RL= 10Ω; VCC= 200V 0.3 μs hFE-1 Classifications L M N 15-30 20-40 30-50 isc Website：www.iscsemi.cn 2