2SC4081Q AITSEMI
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 7
Technical content
AiT Semiconductor Inc. www.ait-ic.com 2SC4081X GENERAL PURPOSE TRANSISTORS NPA SILICON REV1.0 - NOV 2011 RELEASED - - 1 - DESCRIPTION FEATURES The 2SC4081X is available in SC-70 package. Low Cob, Cob=2pF(Typ.). Epitaxial planar type. PNP complement: 2SA1576A RoHS Compliant Available in SC-70 package ORDERING INFORMATION PIN DESCRIPTION Package Type Part Number SC-70 2SC4081Q 2SC4081R 2SC4081S Note 3,000PCS/Reel AiT provides all RoHS Compliant Products
AiT Semiconductor Inc. www.ait-ic.com 2SC4081X GENERAL PURPOSE TRANSISTORS NPA SILICON REV1.0 - NOV 2011 RELEASED - - 2 - ABSOLUTE MAXIMUM RATINGS VCEO, Collector-Emitter Voltage 50V VCBO, Collector-Base Voltage 60V VEBO, Emitter-Base Voltage 7.0V IC, Collector Current 150mAdc PC, Collector Power Dissipation 0.2W Tj, Junction Temperature 150°C Tstg, Storage Temperature -55°C ~ +150°C Stresses above may cause permanent damage to the device. These are stress ratings only and functional operation of the devi ce at these or any other conditions beyond those indicated in the Electrical Characteristics are not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. NOTE1: PC must not be exceeded hEF values are classified as follows: Q R S hEF 120~270 180~390 270~560
AiT Semiconductor Inc. www.ait-ic.com 2SC4081X GENERAL PURPOSE TRANSISTORS NPA SILICON REV1.0 - NOV 2011 RELEASED - - 3 -
ELECTRICAL CHARACTERISTICS
Parameter Symbol Conditions Min. Typ. Max. Unit Collector-emitter breakdown voltage V(BR)CEO IC = 1mA 50 - - V Emitter-base breakdown voltage V(BR)EBO IE = 50μA 7 - - V Collector-base breakdown voltage V(BR)CBO IC = 50μA 60 - - V Collector cutoff current ICBO VCB = 60V - - 0.1 μA Emitter cutoff current IEBO VEB = 7V - - 0.1 μA Collector-emitter saturation voltage VCE(sat) IC/IB = 50mA /5mA - - 0.4 V DC current transfer ratio hEF VCE = 6V ,IC = 1mA 120 - 560 - Transition frequency fT VCE = 12V, IE = -2mA, f = 30MHz - 180 - MHz Output capacitance Cob VCB=12V, IE=0A, f=1MHz - 2.0 3.5 pF
AiT Semiconductor Inc. www.ait-ic.com 2SC4081X GENERAL PURPOSE TRANSISTORS NPA SILICON REV1.0 - NOV 2011 RELEASED - - 4 - TYPICAL PERFORMANCE CHARACTERISTICS 1. Grounded emitter propagation characteristics 2. Grounded emitter output characteristics(I) 3. Grounded emitter output characteristics(II) 4. DC current gain vs. collector current (I) 5. DC current gain vs. collector current (II) 6. Collector-emitter saturation voltage vs. collector current
AiT Semiconductor Inc. www.ait-ic.com 2SC4081X GENERAL PURPOSE TRANSISTORS NPA SILICON REV1.0 - NOV 2011 RELEASED - - 5 - 7. Collector-emitter saturation voltage vs. collector current (I) 8. Collector-emitter saturation voltage vs. collector current (II) 9. Gain bandwidth product vs. emitter current 10. Collector output capacitance vs. collector-base voltage Emitter input capacitance vs. emitter-base voltage 11. Base-collector time constant vs. emitter current
AiT Semiconductor Inc. www.ait-ic.com 2SC4081X GENERAL PURPOSE TRANSISTORS NPA SILICON REV1.0 - NOV 2011 RELEASED - - 6 -
PACKAGE INFORMATION
Dimension in SC-70 Package (Unit: mm) DIM MILLIMETERS INCHES MIN MAX MIN MAX A 0.80 1.00 0.032 0.040 A1 0.00 0.10 0.000 0.004 A2 0.7 REF 0.028 REF b 0.30 0.40 0.012 0.016 c 0.10 0.25 0.004 0.010 D 1.80 2.20 0.071 0.087 E 1.15 1.35 0.045 0.053 e 1.20 1.40 0.047 0.055 e1 0.65 BSC 0.026 BSC L 0.425 REF 0.017 REF HE 2.00 2.40 0.079 0.095
AiT Semiconductor Inc. www.ait-ic.com 2SC4081X GENERAL PURPOSE TRANSISTORS NPA SILICON REV1.0 - NOV 2011 RELEASED - - 7 - IMPORTANT NOTICE AiT Semiconductor Inc. (AiT) reserves the right to make changes to any its product, specifications, to discontinue any integrated circuit product or service without notice, and advises its customers to obtain the latest version of relevant information to verify, before placing orders, that the information being relied on is current. AiT Semiconductor Inc. 's integrated circuit products are not designed, intended, authorized, or warranted to be suitable for use in life support applications, devices or systems or other critical applications. Use of AiT products in such applications is understood to be fully at the risk of the customer. As used herein may involve potential risks of death, personal injury, or servere property, or environmental damage. In order to minimize risks associated with the customer's applications, the customer should provide adequate design and operating safeguards. AiT Semiconductor Inc . assumes to no liability to customer product design or application support. AiT warrants the performance of its products of the specifications applicable at the time of sale.