2SC4080-HF_15 KEXIN

Document overview

www.kexin.com.cn 1 Tran sistors ■ Features

High fT.
High breakdown voltage.
Complementary to 2SA1575-HF 1.Base 2.Collector 3.Emitter 1.70 0.1 0.42 0.1 0.46 0.1 ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO 200 Collector - Emitter Voltage VCEO 200 Emitter - Base Voltage VEBO 4 Collector Current - Continuous IC 100 Collector Current - Pulse ICP 200 Collector Power Dissipation PC 500 mW Junction Temperature TJ 150 Storage Temperature Range Tstg -55 to 150 V mA ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Min Typ Max Unit Collector- base breakdown voltage VCBO Ic= 100 uA， IE= 0 200 Collector- emitter breakdown voltage VCEO Ic= 1 mA， RBE= ∞ 200 Emitter - base breakdown voltage VEBO IE= 100μA， IC= 0 4 Collector-base cut-off current ICBO VCB= 150V , IE= 0 0.1 Emitter cut-off current IEBO VEB= 4V , IC=0 1 Collector-emitter saturation voltage VCE(sat) IC=20 mA, IB=2mA 1 Base - emitter saturation voltage VBE(sat) IC=20 mA, IB=2mA 1 VCE= 10V, IC= 10mA 40 320 VCE= 10V, IC= 60mA 20 Reverse transfer capacitance Cre VCB= 30V,f=1MHz 1.4 Collector output capacitance Cob VCB= 30V, f=1MHz 1.8 Transition frequency fT VCE= 30V, IC= 30mA 400 MHz pF V uA V DC current gain hFE ■ Classification of hfe(1)
Pb−Free Package May be Available. The G−Suffix Denotes a Pb−Free Lead Finish Type 2SC4080-C-HF 2SC4080-D-HF 2SC4080-E-HF 2SC4080-F-HF Range 40-80 60-120 100-200 160-320 Marking CIC F CID F CIE F CIF F NPN Transistors 2SC4080-HF