2SC4080 KEXIN
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 2
Technical content
Features
Small reverse transfer capacitance excellent high-frequency characteristic Adoption of FBET prccess Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit collector-base voltage V CBO 200 V collector-emitter voltage V CEO 200 V emitter-base voltage V EBO 4V collector current I C 100 mA Collector Current (pulse) I CP 200 mA 500 mA 1.3 W Junotion Temperature T J 150 storage Temperature T stg - 5 5t o1 5 0 *Mounted on ceramic board (250mm2X0.8mm) PCCollector Dissipation
www.kexin.com.cn Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit collector cutoff Current I CBO VCB=150V,IE=0 0.1 ìA Emitter cutoff current I EBO VEB=2V,IC=0 1.0 ìA VCE=10V,IC=10mA 40 320 VCE=10V,IC=100mA 20 Gain-Bandwidth product f T VCE=30V,IC=30mA 400 MHz Output Capacitance c ob VCB=30V,f=1MHz 1.8 pF Reverse Transfer c re VCB=30V,f=1MHz 1.4 Collector to Emitter Saturation Voltage V CE(sat) IC=20mA,IB=2mA 1 V Base to Emitter Stauration Voltage V BE(sat) IC=20mA,IB=2mA 1 V Collector to Base Breakdown Voltage V (BR)CBO IC=10ìA,IE=0 200 V Collector to Emitter Breakdown Voltage V (BR)CEO IC=1mA,IB=0 200 V Emitter to Base Breakdown Voltage V (BR)EBO IE=100ìA,IC=0 4 V DC Current Gain h FE hFE Classification Marking Rank C D E F Type 40 to 80 60 to 120 100 to200 160 to 320 CI 2SC4080