2SC4073 ISC
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 4
Technical content
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4073 DESCRIPTION ·
- With TO-220F package
- High voltage
- High speed switching
APPLICATIONS
- For use in switching regulator and general purpose applications PINNING PIN DESCRIPTION
1 Base
2 Collector
3 Emitter
Absolute maximum ratings (Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 500 V VCEO Collector-emitter voltage Open base 400 V VEBO Emitter-base voltage Open collector 10 V IC Collector current 5 A ICM Collector current-peak 10 A IB Base current 2 A PC Collector power dissipation TC=25℃ 30 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ Fig.1 simplified outline (TO-220F) and symbol
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4073 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage I C=25mA; IB=0 400 V VCEsat Collector-emitter saturation voltage I C=2A; IB=0.4 A 0.5 V VBEsat Base-emitter saturation voltage I C=2A; IB=0.4 A 1.3 V ICBO Collector cut-off current V CB=500V; IE=0 100 μA IEBO Emitter cut-off current V EB=10V; IC=0 100 μA hFE DC current gain I C=2A ; VCE=4V 10 30 fT Transition frequency I E=-0.3A ; VCE=12V 10 MHz COB Output capacitance I E=0; VCB=10V;f=1MHz 30 pF Switching times ton Turn-on time 1.0 μs ts Storage time 3.0 μs tf Fall time IC=2A;RL=100Ω IB1=0.2A; IB2=-0.4A VCC=200V 0.5 μs
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4073 PACKAGE OUTLINE Fig.2 Outline dimensions
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4073