2SA1552 SANYO

Document overview

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Technical content

Features

  • Adoption of FBET, MBET processes « High voltage and large current capacity . Fast switching time + Small and slim package permitting 2SA1552/2SC4027-applied sets to be made more compact ( ): 2801552 Absolute Maximum Ratings at Ta=25°C unit Collector to Base Voltage Vopo (-) 180 v Collector to Emitter Voltage Veg (=) 160 Vv Emitter to Base Voltage Vego (-)6 v Collector Current Ig (=) 1.5 A Collector Current(Pulse) Icp (-)2.5 A Collector Dissipation Po 1 W Pc Te=25°C 15 OW Junction Temperature Tj 150 °C Storage Temperature Tstg 55 to +150 °C Electrical Characteristics at Ta=25°C min typ max unit Collector Cutoff Current Ippo Vop=(-) 120V, Ip=0 (-)1.0 pA Emitter Cutoff Current Tuo Vepe(-)AV,Ige0 (-)1.0 pA DC Current Gain bre(q) Vog=(-)5V,Ig=(-)100maA 1008 4oo* bpg(2) Vog=(-)5V,g=(-) 10ma 80 Gain-Bandwidth Product fy, Vog=(-) 10V, Ig=(-)50mA 120 MHz Output Capacitance Cob Vope(-) 10V, £= 1MHz (22)12 pF . os . Continued on next page. *: The 2SA1552/2SC4027 are classified by 100mA hpg as follows: .

100 Rk 200 | 140 S 280 | 200 T 400 :

Package Dimensions 2045B Package Dimensions 2044B (unit: mm) (unit: mm) _ 65 2.3 3.04) 2 3 i ae Lo| “0.7 06st attr . 2S. os 0.5 os A? U2 on 1: Base p23 1: Base aa 2: Collector 2: Collector 3: Emitter fP-2 3) 3: Emitter 4: Collector 2af-f—k-2g 41 Collector SANYO: TP-FA SANYO: TP SANYO Electric Co.,Ltd. Semiconductor Business Headquarters TOKYO OFFICE Tokyo Bldg.,1-10,1 Chome, Ueno, Taito-ku, TOKYO, 110 JAPAN 8109MO/5137TA,TS No.2262-1/4

Continued from preceding page. min typ max unit C-E Saturation Voltage Vor(sat) Ic=(-)500mA,Ip=(~)50mA (0 eo v B-E Saturation Voltage Vpe(sat) 2o=(-)500mA,Ip=(-)50mA (-)0.85(~-)1.2 Vv C-B Breakdown Voltage — Wgpycgo Ic=(-) 10MA,Tp=0 (-) 180 v C-E Breakdown Voltage vee) ce Tge(-)1mA, R 200 (=) 160 vi E-B Breakdown Voltage V(BR)EBO Tg=(-)10pA, Pe=0 (-)6 v Turn-on Time ton See ‘specified Test Circuit. 60 ns Storage Time tst, " (0.7)1.2 ps Fall Time tee " (50)80 ns Switching Time Test Circuit pwezous IB) output sss! ‘le “Fe — 50 101g} -10lag= I¢ = 0.7A . or aon For PNP, the polarity is reversed. a 10°Y Unit (Resistance : 0, Capacitance :F) “te Ic - Vee Le Ic - Vc oe | ee | alates re gai) || | be ei ad ane ae Saas BMC ge as ea Se ea ae ee -0.8] i 208 — <— Bd Pee eg ee OY ss ae ee | 2 ere “0.4 si ai a 0.6 aan —<—— | Zein rr ee 5 ce oe . Collector to Emitter Voltage, Vo, - V “collector to Emitter Voltage,Vop -v Ic - Vo Ic - Veg 1.0 0 ZR JTRS ' 0.6 Beat - 10.8 fT, 9mh eo epee oe go fete | TT) gl Yee ese ae oe eZ py 3 > 5 fae ee), RS ee oe | Ze ee es 9 | or eee

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5 0.2 iT _| = 1. Un— Oe ee fe a 2 ee a C) “10 -20 -30 40 “50 0 10 20 30 40 50 ; Collector to Emitter Voltage,Vog - V Collector to Emitter Voltage,Vog - V ee No.2262~2/4

1.6 Tc - VBE 1.6 Ip - Ve * [L / eat TTL ' - | Jbl Lt Pi2 ene 2 COTA 2 | Lit | I [| FH : : Sane ree LA “ aR, . LLL Lh il | a LITT Le Lt sf). Fy ye gE a . 8 a | ff [T) gL ff fli | * JOT iL ali ti AAA TT Base to Emitter Voltage, Vag ~ V Base to Emitter Voltage,Vy. ~ V mero eee SCA! To neared oS ee aici BI HT BY beep Ltt TT TT é ff test Lt) ¢ [piste el fo pasa | || 8 ER Brody a ys | cae eer een ee ej A\\ BEE Aan all SU WL HL Shon 2S So, TST SIO A 0.01 2 0.1 1.0 Collector Current ,I¢ -A Collector Current Ig -A & 5 ft te 100. cob _- Veg B i iy 3 i 5, i | enn ee YA 2 g ae ie, g Sea eee ssc i | | 2 CC ere © “oo t 3 S79, 23 S49 2 1 23° § 7 a 2 3° 5 7 109 Collector Current, Io -A Collector to Base Voltage, Von -Vv a Vee(sat) > IC a Voe(sat) - Ic ‘feiss TTT TIT 8 ooo PeCTORT | Fed Pe TT a 22-1000 a eeae a 1000 os Ze i ott im it e mal af perro gb eee.

38 ACT 8

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_2SA1552/2$C4027 SE > 40 Vae(sat) - Ic m6 VBe(sat) - Ic s ee ee ee s3atT (TTT gi] [Pity Ty | 3 2 PLT TT gi eat Tit Tt ty og TP EE 34 Be BE -1.0 —— 1.0] qh Sr 8 [__Tes-25U ie Leer | fs et ee — rey Ss ge tp ose | TTT |) 83 7 bee PTT ei] TET ogg J Lr Collector Current,Ig - A Collector Current,Ig ~ A AsO i” Po - Ta [ice |_T [JT [asatss27asc4o27| 27284027 =A] 28ai552/28¢4D27

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@ jt} oN TT AW B19 tS PRESEN PEON a oe Ge ONAN se Ne NT art ttt teen Of LE KT I (For PNP, minus sign is omitted. | 8 ype eat sik TN To To T 5 Ti0 cm 0 66 8010 1 0 0 Collector to Emitter Voltage,Vop - V Ambient Temperature,Ta - °C MH No products described or contained herein are intended for use in surgical implants, life-support systems, aerospace equipment, nuclear power control systems, vehicles, disaster/crime-prevention equipment and the like, the failure of which may directly or indirectly cause injury, death or property loss. Anyone purchasing any products described or contained herein for an above-mentioned use shall: © Accept full responsibility and indemnify and defend SANYO ELECTRIC CO, LTD, its affiliates, . subsidiaries and distributors and all their officers and employees, jointly and severally, against any and all claims and litigation and all damages, cost and expenses associated with such use: ® Not impose any responsibilty for any fault or negligence which may be cited in any such claim or litigation on SANYO ELECTRIC CO, LTD. its affiliates, subsidiaries and distributors or any of their officers and employees jointly or severally. Wi Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guarant- eed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties, No. 226 2-1/4