2SC4024 ISC
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 2
Technical content
isc website：www.iscsemi.com isc & iscsemi isregisteredtrademark1 iscSiliconNPNPowerTransistor 2SC4024
DESCRIPTION
- Collector-EmitterBreakdown Voltage- :V(BR)CEO=50V(Min)
- High DCCurrentGain
- 100% avalanche tested
- Minimum Lot-to-Lotvariationsforrobustdevice performanceandreliable operation
APPLICATIONS
- DC-DCconverter,Emergency lightingInverter and generalpurpose ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-BaseVoltage 100 V VCEO Collector-EmitterVoltage 50 V VEBO Emitter-BaseVoltage 15 V IC CollectorCurrent-Continuous 10 A IB BaseCurrent-Continuous 3 A PC CollectorPowerDissipation @TC=25℃ 35 W TJ JunctionTemperature 150 ℃ Tstg StorageTemperature -55~150 ℃
isc website：www.iscsemi.com isc & iscsemi isregisteredtrademark2 iscSiliconNPNPowerTransistor 2SC4024 ELECTRICALCHARACTERISTICS Tj=25℃ unlessotherwisespecified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-EmitterBreakdownVoltage IC=25mA;IB=0 50 V VCE(sat) Collector-EmitterSaturationVoltage IC=5A;IB=0.1A 0.5 V ICBO CollectorCutoffCurrent VCB=100V;IE=0 100 μA IEBO EmitterCutoffCurrent VEB=15V;IC=0 100 μA hFE DCCurrentGain IC=1A;VCE=4V 300 1600 COB OutputCapacitance IE=0;VCB=10V;f=1MHz 150 pF fT Current-Gain—BandwidthProduct IE=-0.5A;VCE=12V 24 MHz