2SC4020 ISC
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 3
Technical content
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4020 DESCRIPTION ·
- With TO-220C package
- High breakdown voltage : VCBO=900V(Min)
- Wide area of safe operation
APPLICATIONS
- For switching regulator and general purpose applications PINNING PIN DESCRIPTION
1 Base
2 Collector;connected to
3 Emitter
Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 900 V VCEO Collector-emitter voltage Open base 800 V VEBO Emitter-base voltage Open collector 7 V IC Collector current 3 A ICM Collector current-peak 6 A IB Base current 1.5 A PC Collector power dissipation TC=25℃ 50 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4020 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage I C=10mA ; IB=0 800 V VCEsat Collector-emitter saturation voltage I C=0.7A; IB=0.14A 0.5 V VBEsat Base-emitter saturation voltage I C=0.7A; IB=0.14A 1.2 V ICBO Collector cut-off current V CB=800V ;IE=0 100 μA IEBO Emitter cut-off current V EB=7V; IC=0 100 μA hFE DC current gain I C=0.7A ; VCE=4V 10 30 fT Transition frequency I E=-0.3A ; VCE=12V 6 MHz COB Output capacitance f=1MHz ; V CB=10V 40 pF Switching times ton Turn-on time 1.0 μs tstg Storage time 5.0 μs tf Fall time VCC=250V; IC=0.7A IB1=0.1A;IB2=-0.35A; RL=357Ω 1.0 μs
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4020 PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm)