2SC3996 ISC
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 2
Technical content
isc website：www.iscsemi.cn isc & iscsemi is registered trademark isc Silicon NPN Power Transistor 2SC3996
DESCRIPTION
- High Switching Speed
- High Breakdown Voltage- : V (BR)CBO = 1500V(Min)
APPLICATIONS
- Designed for horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(T a =25 SYMBOL PARAMETER VALUE UNIT V CBO Collector-Base V oltage 1500 V V CEO Collector-Emitter V oltage 800 V V EBO Emitter-Base Voltage 6 V I C Collector Current-Continuous 15 A I CM Collector Current-Pulse 35 A P C Collector Power Dissipation @ T C =25℃ 180 W T J Junction Temperature 150 ℃ T stg Storage Temperature Range -55~150
isc website：www.iscsemi.cn isc & iscsemi is registered trademark isc Silicon NPN Power Transistor 2SC3996
ELECTRICAL CHARACTERISTICS
T C =25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP . MAX UNIT V CEO(SUS) Collector-Emitter Sustaining Voltage I C = 100mA; I B = 0 800 V V CE (sat) Collector-Emitter Saturation Voltage I C = 12A; I B =3A 5.0 V V BE (sat) Base-Emitter Saturation Voltage I C = 12A; I B =3A 1.5 V I CBO Collector Cutoff Current V CB = 800V; I E = 0 10 μA I CES Collector Cutoff Current V CE = 1500V; R BE = 0 1.0 mA I EBO Emitter Cutoff Current V EB = 4V; I C = 0 1.0 mA h FE-1 DC Current Gain I C = 1A; V CE = 5V 8 40 h FE-2 DC Current Gain I C = 12A; V CE = 5V 4 8 t stg Storage Time I C = 12A, I =2.4A; I = -4.8A 3.0 μs t f Fall Time 0.2 μs