2SC3996 SANYO

Document overview

  • Manufacturer or author: Provided By digicamel.com
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Technical content

Features

  • High speed (t= 100ns typ). + High reliability (Adoption of HVP process). - High breakdown voltage (Vcgo=1500V). - Adoption of MBIT process. Absolute Maximum Ratings at Ta= 25°C unit Collector-to-Base Voltage Vcso 1500 v Collector-to-Emitter Voltage Vero 800 v Emitter-to-Base Voltage VEBO 6 v Collector Current Ic 15 A Collector Current (Pulse) lop 35 A Collector Dissipation Po Te=25°C 180 Ww Junction Temperature Tj 150 °C Storage Temperature Tstg —55 to +150 °C Electrical Characteristics at Ta= 25°C min typ max unit Collector Cutoff Current IcBo Vop=800V Ig =0 10 pA Collector Cutoff Current Ices Vog=1500V,Rgp=0 1.0 mA Collector Sustain Voltage Veeoisus) Io=100mA,Ip=0 800 Vv Emitter Cutoff Current leno Vep=4V Jo=0 1.0 mA C-E Saturation Voltage Vogisay) Ic=12A,1g=3.0A 5 ov B-E Saturation Voltage Veg(sat) [c= 12A,13=3.0A. 1.5 Vv DC Current Gain hpp(l) Vor=5VI¢=1.0A 8 30 bre) — Vog=5V,I¢=12A 4 8 Storage Time tstg I¢= 8A, Ipi =1.6A,Ipo= —3.2A 3.0 us Fall Time tp 1¢=8A, Ig2=1.6A,Igg= —3.2A 0.2 ps Switching Time Test Circuit Package Dimensions 2048B (unit : mm) Buty eycte § 1% gms 6-0, #3. ” inpur BL . a , 4/8 aaa . 4 & ae son 10096 a0 al|-@ See Yee"-2v Ver = 200¥ = al 20 ° Ma a » | 1: Base —=-—} 2: Collector it 3: Emitter : . SANYO:TO-3PBL SANYO Electric Co.,Ltd. Semiconductor Business Headquarters TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110 JAPAN 62695TS (KOTO) /4138TA/5257TA, TS No.2509-1/3

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21.0 pT Te OH a | ae NN SSeS LE IN Zo, | TT TP TT NAT 2 8 ee & J itt PPT TNS 8 a4. a ee a 2| Ta=25°C a Oa 0.1} L=500uH oon Singlepuse | PTE TT singeruise [| [| | | {|_| 357 49 23 5 7 Wa 23 5 7 so S70 2 T $000 2 3 Collector-to-Emitter Voltage,Vcg — V_ Collector-to-Emitter Voltage, Vcg ~ V No.2509-2/3

Po - Te . wT = 180) ‘at > RL 2 150) —- it aN 7 3 120) : SCC a as 2 99 r | IN | | SCOP NSS ° - | PN tp NG 020 «4 60 80 100 120 wO1s0 0 Case Temperature,Te —*C No products described or contained herein are intended for use in surgical implants, life-support systems, aerospace equipment, nuclear power control systems, vehicles, disaster/crime-prevention equipment and the like, the failure of which may direotly or indirectly cause injury, death or property loss. M Anyone purchasing any products described or contained herein for an above-mentioned use shall: ® Accept fuli responsibility and indemnify and defend SANYO ELECTRIC CO., LTD,, its affiliates, subsidiaries and distributors and all their officers and employees, jointly and severally, against any . and alt claims and litigation and all damages, cost and expenses associated with such use: ® Not impose any responsibility for any fault or negligence which may be cited in any such claim or litigation on SANYO ELECTRIC CO. LTD, its affiliates, subsidiaries and distributors or any of their officers and employees jointly or severally. @ Information (including circuit diagrams and circuit parameters). herein is for example only; it is not guarant- eed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of May, 1995. Specifications and information herein are subject to change without notice, SSS No.2509-3/3