2SC3995 SANYO
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 3
Technical content
Features
- High speed (tp=100ns typ). - High reliability (Adoption of HVP process). - High breakdown voltage (Vcgo = 1500V). - Adoption of MBIT process. Absolute Maximum Ratings at Ta = 25°C unit Collector-to-Base Voltage Veno 1500 Vv Collector-to-Emitter Voltage Vero 800 v Emitter-to-Base Voltage VEBO 6 v Collector Current Ic 12 A Collector Current (Pulse) Ice 30 A Collector Dissipation Po Te= 25°C 180 Ww Junction Temperature Tj 150 °C Storage Temperature Tstg —55 to +150 °C Electrical Characteristics at Ta= 25°C min typ) max unit Collector Cutoff Current lIcpo Vep=800V,I=0 10 pA Collector Cutoff Current Ices Vor=1500V,Rgp=0 1.0 mA Collector Sustain Voltage Vorowsus) I¢=100mA,13=0 800 Vv Emitter Cutoff Current Tego Vep=4V,Ic=0 10 mA C-E Saturation Voltage Vorisat) Ic¢=10A,1g=2.5A 5 v B-E Saturation Voltage Vegsat) Ic=10A,Ip=2.5A 15 v DC Current Gain hrg() Vor=5V,I¢=1.0A 8 30 hpg(2) — Vog=5V,Ic=10A 4 8 Storage Time tstg Ic=8A, Ip) =1.6A,Ipg= —3.2A 30 us Fall Time te Ic =8A, Ipo=1.6A,Igg= —3.2A 0.2 ys Switching Time Test Circuit Package Dimensions 2048B (unit : mm) P.we20,s 7 -0 9. Duty Cycle $ 1% a, input Jt, 23 o son 10048 «70,8 | _% 2 ¢ : al|-é oe . Vpe"~2¥ Vcc ™ 2007 fa yy] 4! 2.8 9 1.0, . wo 4 1: Base k—=— 2: Collector 3: Emitter. . SANYO: TO-3PBL SANYO Electric Co.,Ltd. Semiconductor Business Headquarters TOKYO OFFICE Tokyo Bidg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110 JAPAN 62695TS (KOTO) /5257TA, TS No.2508-1/3
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Bop tt TON Ot —H+—} eH eS AH Ee a ee oS gf} NT Zo TPP TT TT TINA 2 Se | 6 gt A oa ra i Jf ONY sion | | 1 Tt] 3 ta=25°C Ps} 1|L=500,H q| 0 yu! oor [Svelepatee PPP qsnmeeruse TT TT LTT | S37 23 87g 2 5 T to00 7 100 2 3 5 7 Wo 23 Collector-to-Emitter Voltage, Voz - V Collector-to-Emitter Voltage, Vg — V —___LellectortoBmitierVollageVeg~ Vs Collector-to-Emitter Voltage Vor —V No.2508-2/3
= 180 vg S| tT i N 150; i Not | 3S IN a NI a N F Va aN 5 a N x (iN 0 2 40 60 80. 100 10 wit Case Temperature,Te —°C No products described or contained herein are intended for use in surgical implants, life-support systems, aerospace equipment, nuclear power control systems, vehicles, disaster/crime-prevention equipment and the like, the failure of which may directly or indirectly cause injury, death or property loss. @ Anyone purchasing any products described or contained herein for an above-mentioned use shall: ® Accept full responsibility and indemnify and defend SANYO ELECTRIC CO., LTD., its affiliates, subsidiaries and distributors and ail their officers and employees, jointly and severally, against any and all claims and litigation and all damages, cost and expenses associated with such use: . ® Not impose any responsibility for any fault or negligence which may be cited in any such claim or litigation on SANYO ELECTRIC CO. LTD., its affiliates, subsidiaries and distributors or any of their officers and employees jointly or severally. M Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guarant- eed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties, . This catalog provides information as of Kay, 1995. Specifications and information herein are subject to change without notice, eee No.2508-3/3