2SC3994 ISC
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 2
Technical content
isc website：www.iscsemi.cn isc & iscsemi is registered trademark isc Silicon NPN Power Transistor 2SC3994
DESCRIPTION
- High Switching Speed
- High Breakdown Voltage- : V (BR)CBO = 1100V(Min)
APPLICATIONS
- Designed for horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(T a =25 SYMBOL PARAMETER VALUE UNIT V CBO Collector-Base V oltage 1100 V V CEO Collector-Emitter V oltage 800 V V EBO Emitter-Base Voltage 7 V I C Collector Current-Continuous 25 A I CM Collector Current-Pulse 60 A P C Collector Power Dissipation @ T C =25℃ 300 W T J Junction Temperature 150 ℃ T stg Storage Temperature Range -55~150
isc website：www.iscsemi.cn isc & iscsemi is registered trademark isc Silicon NPN Power Transistor 2SC3994
ELECTRICAL CHARACTERISTICS
T C =25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP . MAX UNIT V CEO(SUS) Collector-Emitter Sustaining Voltage I C = 10mA; I B = 0 800 V V CE (sat) Collector-Emitter Saturation Voltage I C = 12A; I B =2.4A 2.0 V V BE (sat) Base-Emitter Saturation Voltage I C = 12A; I B =2.4A 1.5 V I CBO Collector Cutoff Current V CB = 800V; I E = 0 10 μA I EBO Emitter Cutoff Current V EB = 5V; I C = 0 10 μA h FE-1 DC Current Gain I C = 1.6A; V CE = 5V 10 60 h FE-2 DC Current Gain I C = 8A; V CE = 5V 8 t stg Storage Time V CC =400V,5I =-2.5I C =20 A,R L =20Ω 3.0 μs t f Fall Time 0.3 μs