2SC3993 ISC
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 2
Technical content
isc website：www.iscsemi.com isc & iscsemi isregisteredtrademark1 iscSiliconNPNPowerTransistor 2SC3993
DESCRIPTION
- HighSwitching Speed
- HighBreakdown Voltage- :V(BR)CBO=1100V(Min)
- MinimumLot-to-Lotvariations forrobustdevice performanceandreliable operation
APPLICATIONS
- 800V/16Aswitching regulatorapplications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-BaseVoltage 1100 V VCEO Collector-EmitterVoltage 800 V VEBO Emitter-BaseVoltage 7 V IC CollectorCurrent-Continuous 16 A ICM CollectorCurrent-Pulse 40 A PC CollectorPowerDissipation @TC=25℃ 250 W TJ JunctionTemperature 150 ℃ Tstg StorageTemperatureRange -55~150 ℃
isc website：www.iscsemi.com isc & iscsemi isregisteredtrademark2 iscSiliconNPNPowerTransistor 2SC3993 ELECTRICALCHARACTERISTICS TC=25℃ unlessotherwisespecified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-EmitterSustainingVoltage IC=30mA;IB=0 800 V VCE(sat) Collector-EmitterSaturationVoltage IC=6A;IB=1.2A 2.0 V VBE(sat) Base-EmitterSaturationVoltage IC=6A;IB=1.2A 1.5 V ICBO CollectorCutoffCurrent VCB=800V;IE=0 10 μA IEBO EmitterCutoffCurrent VEB=5V;IC=0 10 μA hFE-1 DCCurrentGain IC=1.2A;VCE=5V 10 40 hFE-2 DCCurrentGain IC=6A;VCE=5V 8 tstg StorageTime IC=10A,IB1=2A;IB2=-4A 3.0 μs tf FallTime 0.3 μs hFE-1Classifications K L M 10-20 15-30 20-40