2SC3992 ISC
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 2
Technical content
INCHANGESemiconductor iscProductSpecification isc website：www.iscsemi.com isc & iscsemi isregisteredtrademark1 iscSiliconNPNPowerTransistor 2SC3992
DESCRIPTION
- HighSwitching Speed
- HighBreakdown Voltage- :V(BR)CBO=1100V(Min)
APPLICATIONS
- Designedforhorizontal deflection outputapplications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-BaseVoltage 1100 V VCEO Collector-EmitterVoltage 800 V VEBO Emitter-BaseVoltage 7 V IC CollectorCurrent-Continuous 12 A ICM CollectorCurrent-Pulse 30 A PC CollectorPowerDissipation @TC=25℃ 200 W TJ JunctionTemperature 150 ℃ Tstg StorageTemperatureRange -55~150 ℃
INCHANGESemiconductor iscProductSpecification isc website：www.iscsemi.com isc & iscsemi isregisteredtrademark2 iscSiliconNPNPowerTransistor 2SC3992 ELECTRICALCHARACTERISTICS TC=25℃ unlessotherwisespecified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEX(SUS) Collector-EmitterSustainingVoltage IC=10mA;IB=0 800 V V(BR)CBO Collector-BaseBreakdownVoltage IC=1mA;RBE = ∞ 1100 V(BR)CEO Collector-EmitterBreakdownVoltage IC=5mA;IB=0 800 V(BR)EBO Emitter-BaseBreakdownVoltage IE=1mA;IC=0 7 VCE(sat) Collector-EmitterSaturationVoltage IC=6A;IB=1.2A 2.0 V VBE(sat) Base-EmitterSaturationVoltage IC=6A;IB=1.2A 1.5 V ICBO CollectorCutoffCurrent VCB=800V;IE=0 10 μA IEBO EmitterCutoffCurrent VEB=5V;IC=0 10 μA hFE-1 DCCurrentGain IC=0.8A;VCE=5V 10 60 hFE-2 DCCurrentGain IC=4A;VCE=5V 8 Ton OnTime VCC=400V,5IB1=-2.5IB2=IC=8A, RL=50Ω 0.5 μs tstg StorageTime 3.0 μs tf FallTime 0.3 μs