2SC3991 ISC
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 2
Technical content
isc website：www.iscsemi.com isc & iscsemi isregisteredtrademark1 iscSiliconNPNPowerTransistor 2SC3991
DESCRIPTION
- HighSwitching Speed
- HighBreakdown Voltage- :V(BR)CBO=800 V(Min)
- MinimumLot-to-Lotvariations forrobustdevice performanceandreliable operation
APPLICATIONS
- Designedforswitching regulatorapplications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-BaseVoltage 800 V VCEO Collector-EmitterVoltage 500 V VEBO Emitter-BaseVoltage 7 V IC CollectorCurrent-Continuous 50 A PC CollectorPowerDissipation @TC=25℃ 300 W TJ JunctionTemperature 150 ℃ Tstg StorageTemperatureRange -55~150 ℃
isc website：www.iscsemi.com isc & iscsemi isregisteredtrademark2 iscSiliconNPNPowerTransistor 2SC3991 ELECTRICALCHARACTERISTICS TC=25℃ unlessotherwisespecified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-EmitterSustainingVoltage IC=30mA;IB=0 450 V VCE(sat) Collector-EmitterSaturationVoltage IC=24A;IB=4.8A 1.0 V VBE(sat) Base-EmitterSaturationVoltage IC=24A;IB=4.8A 1.5 V ICBO CollectorCutoffCurrent VCB=500V;IE=0 10 μA IEBO EmitterCutoffCurrent VEB=5V;IC=0 10 uA hFE-1 DCCurrentGain IC=4.8A;VCE=5V 15 50 hFE-2 DCCurrentGain IC=24A;VCE=5V 8