2SC3989 ISC
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 2
Technical content
INCHANGESemiconductor iscProductSpecification isc website：www.iscsemi.com isc & iscsemi isregisteredtrademark1 iscSiliconNPNPowerTransistor 2SC3989
DESCRIPTION
- High Collector-EmitterBreakdown Voltage- :V(BR)CEO=500V(Min)
- High Switching Speed
- WideArea ofSafeOperation
APPLICATIONS
- Designedforswitchingregulatorandgeneralpurpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-BaseVoltage 800 V VCEO Collector-EmitterVoltage 500 V VEBO Emitter-Basevoltage 7 V IC CollectorCurrent-Continuous 25 A ICM CollectorCurrent-Peak 40 A IB BaseCurrent-Continuous 8 A PC CollectorPowerDissipation @TC=25℃ 200 W TJ JunctionTemperature 150 ℃ Tstg StorageTemperatureRange -55~150 ℃
INCHANGESemiconductor iscProductSpecification isc website：www.iscsemi.com isc & iscsemi isregisteredtrademark2 iscSiliconNPNPowerTransistor 2SC3989 ELECTRICALCHARACTERISTICS TC=25℃ unlessotherwisespecified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-EmitterBreakdownVoltage IC=5mA;IB=0 500 V V(BR)CBO Collector-BaseBreakdown Voltage IC=1mA;IE=0 800 V V(BR)EBO Emitter-BaseBreakdownVoltage IE=1mA;IC=0 7 V VCE(sat) Collector-EmitterSaturationVoltage IC=12A;IB=2.4A 1.0 V VBE(sat) Base-EmitterSaturationVoltage IC=12A;IB=2.4A 1.5 V ICBO CollectorCutoffCurrent VCB=500V;IE=0 10 μA IEBO EmitterCutoffCurrent VEB=5V;IC=0 10 μA hFE-1 DCCurrentGain IC=2.4A;VCE=5V 15 50 hFE-2 DCCurrentGain IC=12A;VCE=5V 8 fT Current-Gain—BandwidthProduct IC=2.4A;VCE=10V 18 MHz COB OutputCapacitance IE=0;VCB=10V 260 pF hFE-1Classifications L M N 15-30 20-40 30-50