2SC3989 SANYO
Document overview
- Manufacturer or author: Provided By digicamel.com
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Technical content
Features
+ High breakdown voltage, high reliability + Fast switching speed (te: 0. Ips typ) « Adoption of MBIT process, Absolute Maximum Ratings at Ta=25°C unit Collector -to-Base Voltage Vego 800 V Collector-to-Emitter Voltage Voro 500 Vv Emitter-to-Base Voltage Vepo 7 Vv Collector Current Ig 25 =A Peak Collector Current lop PW£300ps,Duty Cycleg10% 40 A Base Current Ig 8 oA Collector Dissipation Pq _Te=25°C 200 Ww Junction Temperature Tj 150 °F Storage Temperature Tstg 55 to +150 °C Electrical Characteristics at Ta=25°C min typ max unit Collector Cutoff Current Icpo Vope500V,I,=0 10, pA Emitter Cutoff Voltage Trpo Vep=OV,Ip=0 10 pA DC Current Gain hep (1) Vog=5V,Ig=2.4A 158 50* bpe(p) Voge 5VsIc=12A 8 Gain Bandwidth Product fp Vop=10V,1g=2. 4A 18 MHz Output Capacitance Cob Vogt 10V, £= 1MHz 260 pF C-E Saturation Voltage Vor(sat) Igst2A,Ip=2.4A 1.0 v B-E Saturation Voltage Vpe(sat) Ig=12A,Ip=2.4A 1.5 v C-B Breakdown Voltage Voprycpo Ic=1mA,Tp=0 800 Vv C~E Breakdown Voltage V(BR)CEO Ig=5mA , Rpp=co 500 v E-B Breakdown Voltage Vpr)Epo Ip=1mA,Ip=0 7 Vv C-E Sustain Voltage Vogx(sus) Ig=10A,1,4=-Ip5=2A 500 L©200pK, Clamped Turn-on Time ton Veg=200V, 0.5 ps Storage Time tote 5igj=-2-5Ipo=To=14A 3.0 ps Fall Time tp R24. 3onms 0.30 ps *: The hre(4) of the 2SC3989 is classified as follows. When specifying the hpE(1) rank, specify two ranks or more in principle. Package Dimensions 2048 Switching Time Test Cireuit (unit: mm) ; ; nis Oe, caer £ 3 0 a lS = o ey met | YR: We? RL 9) $/ EF 0 3| | on ii . : ars Ee | 1009 orp fay 4 wl 28 J | ~~ 2a0v 2 vellleo ° © Emitter + $f C: Collector Unit (Resistance : 2, Capacitance : F) qk—=—>-— Bt Base SANYO : TO- 3PBL SANYO Electric Co.,Ltd. Semiconductor Business Headquarters _ TOKYO OFFICE Tokyo Bldg.,1-10,1 Chome, Ueno, Taito-ku, TOKYO, 110 JAPAN 4217TA,TS No.2556-1/1