2SC3980 PANASONIC

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2SC3980, 2SC3980A Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching n Features l High-speed switching l High collector to base voltage VCBO l Wide area of safe operation (ASO) l Satisfactory linearity of foward current transfer ratio hFE l Full-pack package which can be installed to the heat sink with one screw n Absolute Maximum Ratings (TC =25˚C) Parameter Collector to base voltage Collector to emitter voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Base current Collector power dissipation Junction temperature Storage temperature Symbol V CBO V CES V CEO V EBO ICP IC IB PC Tj Tstg Ratings 900 1000 900 1000 800 150 –55 to +150 Unit V V V V A A A W 2SC3980 2SC3980A 2SC3980 2SC3980A TC =25°C Ta=25°C n Electrical Characteristics (TC =25˚C) Parameter Collector cutoff current Emitter cutoff current Collector to emitter voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Turn-on time Storage time Fall time Symbol I CBO IEBO V CEO hFE1 hFE2 V CE(sat) V BE(sat) fT ton tstg tf Conditions V CB = 900V, IE = 0 V CB = 1000V , IE = 0 V EB = 7V , IC = 0 IC = 10mA, IB = 0 V CE = 5V , IC = 0.1A V CE = 5V , IC = 2A IC = 2A, IB = 0.4A IC = 2A, IB = 0.4A V CE = 5V , IC = 0.2A, f = 1MHz IC = 2A, IB1 = 0.4A, IB2 = – 0.8A, V CC = 250V min 800 typ max 1.5 1.5 0.7 2.5 0.3 Unit mA mA V V V MHz ms ms ms 2SC3980 2SC3980A Unit: mm 1:Base 2:Collector 3:Emitter TOP–3 Full Pack Package(a) 15.0–0.3 21.0–0.516.2–0.5 12.5 Solder Dip 3.5 0.715.0–0.2 5.0–0.2 11.0–0.2 10.9–0.5 5.45–0.3 321 1.1–0.1 2.0–0.2 0.6–0.2 2.0–0.1 f3.2–0.1 3.2

Power Transistors 2SC3980, 2SC3980A PC —T a I C —V CE V CE(sat)—I C V BE(sat)—I C hFE —I C fT —I C C ob —V CB ton, tstg, tf — IC Area of safe operation (ASO) 0 160 40 120 80 14020 100 60 (1) (3) (2) (1) TC =Ta (2) With a 100 · 100 · 2mm Al heat sink (3) Without heat sink (PC =3W) Ambient temperature Ta (˚C) Collector power dissipation PC (W ) 01 2 10826 4 TC =25˚C 400mA 500mA 100mA 150mA 300mA 200mA 50mA IB=1000mA Collector to emitter voltage VCE (V) Collector current IC (A) 0.01 0.1 1 100.03 0.3 3 0.01 0.03 0.1 0.3 100 IC /IB=5 TC =100˚C 25˚C –25˚C Collector current IC (A) Collector to emitter saturation voltage VCE(sat) (V) 0.01 0.1 1 100.03 0.3 3 0.1 100 0.3 IC /IB=5 TC =100˚C 25˚C –25˚C Collector current IC (A) Base to emitter saturation voltage VBE(sat) (V) 0.01 0.1 1 100.03 0.3 3 1000 100 300 VCE =5V TC =100˚C –25˚C 25˚C Collector current IC (A) Forward current transfer ratio hFE 0.01 0.1 1 100.03 0.3 3 0.1 100 0.3 VCE =5V f=1MHz T C =25˚C Collector current IC (A) Transition frequency fT (MHz ) 1 3 10 30 100 1000 100 300 IE=0 f=1MHz T C =25˚C Collector to base voltage VCB (V) Collector output capacitance Cob (pF) 08 26 4715 3 0.01 0.03 0.1 0.3 100 tstg tf ton Pulsed tw =1ms Duty cycle=1% I C /IB=5 (2IB1=–IB2) VCC =200V TC =25˚C Collector current IC (A) Switching time ton,tstg,tf (ms) 1 10 100 10003 30 300 0.01 0.03 0.1 0.3 100 Non repetitive pulse TC =25˚C ICP IC DC t=10ms Collector to emitter voltage VCE (V) Collector current IC (A)

Power Transistors 2SC3980, 2SC3980A Area of safe operation, reverse bias ASO Reverse bias ASO measuring circuit R th(t)—t 10–4 1010–3 10–110–2 11 0 3102 104 0.1 100 10000 1000 Note: Rth was measured at Ta=25˚C and under natural convection. (1) PT=10V · 0.3A (3W) and without heat sink (2) PT=10V · 1.0A (10W) and with a 100 · 100 · 2mm Al heat sink (1) (2) Time t (s) Thermal resistance Rth(t) (˚C/W) 0 1600400 1200800 1400200 1000600 Lcoil=100µH IC /IB=5 (IB1=–IB2) TC =25˚CICP IC 2SC3980 2SC3980A Collector to emitter voltage VCE (V) Collector current IC (A) L coil ICIB1 Vin tW –IB2 Vclamp VCC T.U.T