2SC3980 ISC

Document overview

  • Manufacturer or author: Provided By digicamel.com
  • PDF pages: 2

Technical content

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC3980 DESCRIPTION ·

  • Collector-Base Breakdown Voltage- : V (BR)CBO= 900V(Min.)
  • Wide Area of Safe Operation
  • High Speed Switching

APPLICATIONS

  • Designed for high speed switching applications. ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 900 V VCES Collector-Emitter Voltage 900 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 4 A ICM Collector Current-Peak 6 A IB B Base Current-Continuous 2 A Collector Power Dissipation @Ta=25℃ 3 PC Collector Power Dissipation C=25℃ 70 W Tj Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc Website：www.iscsemi.cn

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC3980

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0 800 V VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB= 0.4A B 1.5 V VBE(sat) Base-Emitter Saturation Voltage IC= 2A; IB= 0.4A B 1.5 V ICBO Collector Cutoff Current VCB= 900V; IE= 0 50 μA IEBO Emitter Cutoff Current VEB= 7V; IC= 0 50 μA hFE-1 DC Current Gain IC= 0.1A; VCE= 5V 8 hFE-2 DC Current Gain IC= 2A; VCE= 5V 6 fT Current-Gain—Bandwidth Product IC= 0.2A; VCE= 5V; f= 1MHz 15 MHz Switching Times ton Turn-on Time 0.7 μs ts Storage Time 2.5 μs tf Fall Time IC= 2A; IB1= 0.4A; IB2= -0.8A; VCC= 250V 0.3 μs isc Website：www.iscsemi.cn