2SC3969 SAVANTIC
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 3
Technical content
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC3969
DESCRIPTION
- With TO-220C package
- Low collector saturation voltage
- High breakdown voltage
- Fast switching speed
APPLICATIONS
- For high voltage switching applications PINNING PIN DESCRIPTION
1 Base
2 Collector;connected to
3 Emitter
Absolute maximum ratings (Tc=25) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 400 V VCEO Collector-emitter voltage Open base 400 V VEBO Emitter-base voltage Open collector 7 V IC Collector current -DC 2 A ICM Collector current-Peak 4 A Ta=25 2 PC Collector power dissipation TC=25 40 W Tj Junction temperature 150 Tstg Storage temperature -55~150
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC3969 CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage I C=1.0A ;IB1=0.1A,L=1mH 400 V V(BR)CEO Collector-emitter breakdown voltage I C=1mA ;IB=0 400 V V(BR)CBO Collector-base breakdown voltage I C=50µA ;IE=0 400 V V(BR)EBO Emitter-base breakdown voltage I E=50µA ;IC=0 7 V VCEsat Collector-emitter saturation voltage I C=1A; IB=0.2A 1.0 V VBEsat Base-emitter saturation voltage I C=1A; IB=0.2A 1.5 V ICBO Collector cut-off current V CB=400V; IE=0 10 µA IEBO Emitter cut-off current V EB=7V; IC=0 10 µA hFE DC current gain I C=0.1A ; VCE=5V 25 50 fT Transition frequency I E=-0.1A ; VCE=10V;f=5MHz 10 MHz COB Collector outoput capacitance I E=0; f=1MHz ; VCB=10V 30 pF Switching times ton Turn-on time 1.0 µs ts Storage time 2.5 µs tf Fall time VCC@200V ,IC=0.8A IB1=-IB2=0.08A;RL=250B 1.0 µs
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC3969 PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.10mm)