2SC3969 ISC
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 2
Technical content
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC3969
DESCRIPTION
- Low Collector Saturation Voltage
- High Colle ctor-Emitter Breakdown Voltage- : V (BR)CEO= 400V (Min)
- High Switching Speed
APPLICATIONS
- Designed for switching regulator applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 400 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 2 A ICM Collector Current-Peak 4 A Collector Power Dissipation @ TC=25℃ 20 PC Collector Power Dissipation @ Ta=25℃ 2 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc Website：www.iscsemi.cn
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC3969
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 1.0A ; IB1= 0.1A, L= 1mH 400 V V(BR)CBO Collector-Base Breakdown Voltage IC= 50μA; IE= 0 400 V V(BR)CEO Collector-Emitter Breakdown Voltage IC= 1mA; IB= 0 B 400 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 50μA; IC= 0 7 V VCE(sat) Collector-Emitter Saturation Voltage IC= 1A; IB= 0.2A B 1.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 1A; IB= 0.2A B 1.5 V ICBO Collector Cutoff Current VCB= 400V; IE= 0 10 μA IEBO Emitter Cutoff Current VEB= 7V; IC= 0 10 μA hFE DC Current Gain IC= 0.1A ; VCE= 5V 25 50 fT Current-Gain—Bandwidth Product IE= -0.1A ; VCE= 10V 10 MHz COB Output Capacitance IE= 0; VCB= 10V; f= 1.0MHz 30 pF Switching times ton Turn-on Time 1.0 μs tstg Storage Time 2.5 μs tf Fall Time IC= 0.8A ; IB1= -IB2= 0.08A; RL= 250Ω;VCC≈ 200V 1.0 μs isc Website：www.iscsemi.cn 2