2SC3969 ROHM

Document overview

  • Manufacturer or author: Provided By digicamel.com
  • PDF pages: 4

Technical content

Features

1) Low VCE(sat). VCE(sat) = 0.15V (Typ.) (IC /IB = 1A / 0.2A) 2) High breakdown voltage. VCEO = 400V 3) Fast switching. tr = 1.0µs (IC = 0.8A) Structure Three-layer, diffused planar type NPN silicon transistor

Transistors 2SC3969 / 2SC5161 Absolute maximum ratings (Ta = 25/C0095C) Electrical characteristics (Ta = 25/C0095C) Packaging specifications and hFE hFE values are classified as follows :

Transistors 2SC3969 / 2SC5161 Electrical characteristic curves

Transistors 2SC3969 / 2SC5161 Switching characteristics measurement circuit