2SC3939 PANASONIC

Document overview

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Technical content

Silicon NPN epitaxial planer type For low-frequency driver amplification Complementary to 2SA1533 n Features l High collector to emitter voltage VCEO . l Optimum for the driver stage of a low-frequency and 25 to 30W output amplifier. l Allowing supply with the radial taping. n Absolute Maximum Ratings (Ta=25˚C) Unit: mm Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature 1:Emitter 2:Collector 3:Base TO–92NL Package 5.0–0.2 13.5–0.5 0.7–0.2 8.0–0.2 1.27 123 1.27 4.0–0.2 0.45 +0.15 –0.10.45 +0.15 –0.1 2.3–0.2 0.7–0.1 2.54–0.15 Symbol V CBO V CEO V EBO ICP IC PC Tj Tstg Ratings 0.5 150 –55 ~ +150 Unit V V V A A W n Electrical Characteristics (Ta=25˚C) Parameter Collector cutoff current Collector to base voltage Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Collector output capacitance Symbol ICBO V CBO V CEO V EBO hFE1 *1 hFE2 V CE(sat) V BE(sat) fT C ob Conditions V CB = 20V , IE = 0 IC = 10mA, IE = 0 IC = 100mA, IB = 0 IE = 10mA, IC = 0 V CE = 10V , IC = 150mA*2 V CE = 5V , IC = 500mA*2 IC = 300mA, IB = 30mA*2 IC = 300mA, IB = 30mA*2 V CB = 10V , IE = –50mA, f = 200MHz V CB = 10V , IE = 0, f = 1MHz min 130 typ 100 0.2 0.85 120 max 0.1 330 0.4 1.2 Unit mA V V V V V MHz pF *1hFE1 Rank classification Rank R S hFE1 130 ~ 220 185 ~ 330 *2 Pulse measurement

PC — Ta I C — V CE IC — IB V CE(sat) — IC V BE(sat) — IC hFE — IC fT — IE C ob — V CB ICBO — Ta 0 160 40 120 80 14020 100 60 1.2 1.0 0.8 0.6 0.4 0.2 Ambient temperature Ta (˚C) Collector power dissipation PC (W ) 01 0 826 4 1.2 1.0 0.8 0.6 0.4 0.2 IB=10mA 9mA 8mA 7mA 6mA 5mA 4mA 3mA 2mA 1mA Ta=25˚C Collector to emitter voltage VCE (V) Collector current IC (A) 01 0 826 4 1.2 1.0 0.8 0.6 0.4 0.2 VCE =10V Ta=25˚C Base current IB (mA ) Collector current IC (A) 1 10 100 10003 30 300 0.001 0.003 0.01 0.03 0.1 0.3

10 IC /IB=10

Ta=75˚C 25˚C –25˚C Collector current IC (mA ) Collector to emitter saturation voltage VCE(sat) (V) 1 10 100 10003 30 300 0.01 0.03 0.1 0.3

100 IC /IB=10

Ta=–25˚C 25˚C 75˚C Collector current IC (mA ) Base to emitter saturation voltage VBE(sat) (V) 1 10 100 10003 30 300 300 250 200 150 100 VCE =10V Ta=75˚C 25˚C –25˚C Collector current IC (mA ) Forward current transfer ratio hFE 200 160 120 VCB =10V Ta=25˚C Emitter current IE (mA ) Transition frequency fT (MHz ) 1 3 10 30 100 IE=0 f=1MHz Ta=25˚C Collector to base voltage VCB (V) Collector output capacitance Cob (pF) 0 180 60 120 102 103 104 VCB =20V Ambient temperature Ta (˚C) ICBO (Ta) ICBO (Ta=25˚C)

ICEO — Ta Area of safe operation (ASO) 0 140 6020 80 12040 100 102 103 105 104 VCE =10V Ambient temperature Ta (˚C) ICEO (Ta) ICEO (Ta=25˚C) 0.1 1 10 1000.3 3 30 0.001 0.003 0.01 0.03 0.1 0.3

10 Single pulse

Ta=25˚C t=10ms t=1sDC ICP IC Collector to emitter voltage VCE (V) Collector current IC (A)