2SC3936 PANASONIC
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 3
Technical content
Silicon NPN epitaxial planer type For high-frequency amplification n Features l Optimum for RF amplification, oscillation, mixing, and IF of FM/ AM radios. l S-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. n Absolute Maximum Ratings (Ta=25˚C) Unit: mm Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature 1:Base 2:Emitter EIAJ:SC–70 3:Collector S–Mini Type Package 2.1–0.1 1.3–0.10.9–0.1 0.7–0.1 0.3 +0.1 –0 0.15 +0.1 –0.05 2.0–0.2 0.650.2 0.65 0 to 0.1 0.2–0.1 Symbol V CBO V CEO V EBO IC PC Tj Tstg Ratings 150 150 –55 ~ +150 Unit V V V mA mW n Electrical Characteristics (Ta=25˚C) Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Transition frequency Common emitter reverse transfer capacitance Symbol V CBO V CEO V EBO hFE * fT C re Conditions IC = 10mA, IE = 0 IC = 2mA, IB = 0 IE = 10mA, IC = 0 V CE = 10V , IC = 1mA V CB = 10V , IE = –1mA, f = 200MHz V CE = 10V , IC = 1mA, f = 10.7MHz min 150 typ 230 1.3 max 250 Unit V V V MHz pF Marking symbol :K *hFE Rank classification Rank B C hFE 70 ~ 160 110 ~ 250 Marking Symbol KB KC
PC — Ta I C — V CE IC — IB IC — V BE V CE(sat) — IC hFE — IC fT — IE Zrb — IE C re — V CE 0 160 40 120 80 14020 100 60 240 200 160 120 Ambient temperature Ta (˚C) Collector power dissipation PC (mW ) 01 8 61 2 Ta=25˚C IB=100mA 80mA 60mA 40mA 20mA Collector to emitter voltage VCE (V) Collector current IC (mA ) 0 180 60 120 VCE =10V Ta=25˚C Base current IB (mA) Collector current IC (mA ) VCE =10V Ta=75˚C –25˚C 25˚C Base to emitter voltage VBE (V) Collector current IC (mA ) 0.1 1 10 1000.3 3 30 0.01 0.03 0.1 0.3
100 IC /IB=10
Ta=75˚C 25˚C –25˚C Collector current IC (mA ) Collector to emitter saturation voltage VCE(sat) (V) 0.1 1 10 1000.3 3 30 300 250 200 150 100 VCE =10V Ta=75˚C 25˚C –25˚C Collector current IC (mA ) Forward current transfer ratio hFE 600 500 400 300 200 100 Ta=25˚C VCB =10V Emitter current IE (mA ) Transition frequency fT (MHz ) f=2MHz Ta=25˚C VCB =6V 10V Emitter current IE (mA ) Reverse transfer impedance Zrb (W ) 0.1 1 10 1000.3 3 30 2.4 2.0 1.6 1.2 0.8 0.4 IC =1mA f=10.7MHz Ta=25˚C Collector to emitter voltage VCE (V) Common emitter reverse transfer capacitance Cre (pF)
C ob — V CB bie — gie bre — gre bfe — gfe boe — goe 1 3 10 30 100 1.6 1.2 0.4 1.0 1.4 0.8 0.2 0.6 IE=0 f=1MHz Ta=25˚C Collector to base voltage VCB (V) Collector output capacitance Cob (pF) 02 0 1641 2 8 yie=gie+jbie VCE =10V f=0.45MHz –1mA –2mA –4mA –7mA 10.7 100 IE=– 0.1mA Input conductance gie (mS ) Input susceptance bie (mS ) –3.0 – 0.5 –1.0 –1.5 –2.0 –2.5 yre=gre+jbre VCE =10V f=0.45MHz IE=–7mA –2mA –4mA –1mA – 0.4mA 100 10.7 Reverse transfer conductance gre (mS ) Reverse transfer susceptance bre (mS ) 0 100 8020 60 40 –120 –20 –40 –60 –80 –100 yfe=gfe+jbfe VCE =10V f=0.45MHz 10.7 10.7 10.7 0.45– 0.4mA – 0.1mA –1mA –2mA –4mA IE=–7mA 100 100 100 100 58 Forward transfer conductance gfe (mS ) Forward transfer susceptance bfe (mS ) 1.2 1.0 0.8 0.6 0.4 0.2 yoe=goe+jboe VCE =10Vf=0.45MHz IE=– 0.1mA –7mA –4mA –2mA –1mA – 0.4mA 10.7 100 Output conductance goe (mS ) Output susceptance boe (mS )