2SC3935

2SC3935 PANASONIC

Document overview

• Manufacturer or author: Provided By digicamel.com
• PDF pages: 2

Technical content

Silicon NPN epitaxial planer type For high-frequency amplification/oscillation/mixing n Features l High transition frequency fT. l Small collector output capacitance Cob and common base reverse transfer capacitance Crb. l S-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. n Absolute Maximum Ratings (Ta=25˚C) Unit: mm Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature 1:Base 2:Emitter EIAJ:SC–70 3:Collector S–Mini Type Package 2.1–0.1 1.3–0.10.9–0.1 0.7–0.1 0.3 +0.1 –0 0.15 +0.1 –0.05 2.0–0.2 0.650.2 0.65 0 to 0.1 0.2–0.1 Symbol V CBO V CEO V EBO IC PC Tj Tstg Ratings 150 150 –55 ~ +150 Unit V V V mA mW n Electrical Characteristics (Ta=25˚C) Parameter Collector cutoff current Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Transition frequency Collector output capacitance Common emitter reverse transfer capacitance Base time constant hFE ratio Symbol ICBO ICEO V CEO V EBO hFE1 hFE2 V CE(sat) fT C ob C rb rbb' · CC hFE(RATIO) Conditions V CB = 10V , IE = 0 V CE = 10V , IB = 0 IC = 2mA, IB = 0 IE = 10mA, IC = 0 V CE = 2.4V , IC = 7.2mA V CE = 2.4V , IC = 100mA IC = 20mA, IB = 4mA V CE = 2.4V , IC = 7.2mA, f = 200MHz V CB = 4V , IE = 0, f = 1MHz V CB = 4V , IE = 0, f = 1MHz V CB = 4V , IE = –5mA, f = 31.9MHz V CE = 2.4V , IC = 100mA V CE = 2.4V , IC = 7.2mA min 1.4 0.75 typ 1.9 0.9 0.25 11.8 max 220 0.5 2.5 1.1 0.35 13.5 1.6 Unit mA mA V V V GHz pF pF ps *1hFE Rank classification Rank P Q hFE 75 ~ 130 110 ~ 220 Marking symbol :1S

PC — Ta I C — V CE IC — V BE V CE(sat) — IC hFE — IC fT — IE C ob — V CB 0 160 40 120 80 14020 100 60 200 160 120 TC =Ta Ambient temperature Ta (˚C) Collector power dissipation PC (mW ) 01 2 10826 4 Ta=25˚C 400mA 300mA 200mA 100mA IB=500mA Collector to emitter voltage VCE (V) Collector current IC (mA ) VCE =4V Ta=75˚C –25˚C 25˚C Base to emitter voltage VBE (V) Collector current IC (mA ) 0.1 1 10 1000.3 3 30 0.01 0.03 0.1 0.3

100 IC /IB=10

Ta=75˚C 25˚C –25˚C Collector current IC (mA ) Collector to emitter saturation voltage VCE(sat) (V) 0.1 1 10 1000.3 3 30 360 300 240 180 120 VCE =4V Ta=75˚C 25˚C –25˚C Collector current IC (mA ) Forward current transfer ratio hFE 4.0 3.0 1.0 2.5 3.5 2.0 0.5 1.5 VCB =4V Ta=25˚C Emitter current IE (mA ) Transition frequency fT (GHz ) 1 3 10 30 100 1.6 1.2 0.4 1.0 1.4 0.8 0.2 0.6 IE=0 f=1MHz Ta=25˚C Collector to base voltage VCB (V) Collector output capacitance Cob (pF)