2SC3934 PANASONIC

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Technical content

Silicon NPN epitaxial planer type For high-frequency wide-band low-noise amplification n Features l High transition frequency fT. l S-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. n Absolute Maximum Ratings (Ta=25˚C) Unit: mm Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature 1:Base 2:Emitter EIAJ:SC–70 3:Collector S–Mini Type Package 2.1–0.1 1.3–0.10.9–0.1 0.7–0.1 0.3 +0.1 –0 0.15 +0.1 –0.05 2.0–0.2 0.650.2 0.65 0 to 0.1 0.2–0.1 Symbol V CBO V CEO V EBO ICP IC PC Tj Tstg Ratings 2.5 150 150 –55 ~ +150 Unit V V V mA mA mW n Electrical Characteristics (Ta=25˚C) Parameter Collector cutoff current Emitter cutoff current Forward current transfer ratio Transition frequency Collector output capacitance Foward transfer gain Maximum unilateral power gain Noise figure Symbol I CBO IEBO hFE fT C ob | S21e |2 GUM NF Conditions V CB = 10V , IE = 0 V EB = 2V , IC = 0 V CE = 10V , IC = 10mA V CE = 10V , IC = 10mA, f = 800MHz V CB = 10V , IE = 0, f = 1MHz V CE = 10V , IC = 20mA, f = 800MHz V CE = 10V , IC = 20mA, f = 800MHz V CE = 10V , IC = 5mA, f = 800MHz min typ 4.5 1.3 max 100 1.2 2.5 Unit mA mA GHz pF dB dB dB Marking symbol :1U

PC — Ta I C — V CE IC — V BE V CE(sat) — IC hFE — IC fT — IC C ob — V CB NF — IC S11, S22 0 160 40 120 80 14020 100 60 240 200 160 120 Ambient temperature Ta (˚C) Collector power dissipation PC (mW ) 01 2 10826 4 Ta=25˚C 250mA 200mA 150mA 100mA 50mA IB=300mA Collector to emitter voltage VCE (V) Collector current IC (mA ) VCE =10V Ta=75˚C –25˚C 25˚C Base to emitter voltage VBE (V) Collector current IC (mA ) 0.1 1 10 1000.3 3 30 0.01 0.03 0.1 0.3

100 IC /IB=10

Ta=75˚C 25˚C –25˚C Collector current IC (mA ) Collector to emitter saturation voltage VCE(sat) (V) 0.1 1 10 1000.3 3 30 240 200 160 120 VCE =10V Ta=75˚C 25˚C –25˚C Collector current IC (mA ) Forward current transfer ratio hFE Ta=25˚C VCE =10V Collector current IC (mA ) Transition frequency fT (GHz ) 1 3 10 30 100 1.2 1.0 0.8 0.6 0.4 0.2 IE=0 f=1MHz Ta=25˚C Collector to base voltage VCB (V) Collector output capacitance Cob (pF) 1 3 10 30 100 R g=50W VCE =10V f=800MHz Collector current IC (mA ) Noise figure NF (dB) 0.2 – 0.2 0.4 – 0.4 0.8 – 0.8 – 0.6 1.5 –1.5 –10 1000MHz 1000MHz S22 S11 800MHz 800MHz 500MHz 500MHz VCE =10V IC =20mA E: Earth

S12, S21 +90˚ +60˚ –60˚ +120˚ –120˚ +30˚ –30˚ +150˚ –150˚ –180˚ 0˚ –90˚ –30 5 15 20 10–15–10 –25 –20 1000MHz VCE =10V IC =20mA E: Earth S21 S12 1000MHz 800MHz 800MHz 500MHz 500MHz