2SC3929 PANASONIC

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Technical content

2SC3929, 2SC3929A Silicon NPN epitaxial planer type For low-frequency output amplification Complementary to 2SA1531 and 2SA1531A n Features l Low noise voltage NV . l High foward current transfer ratio hFE . l S-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. n Absolute Maximum Ratings (Ta=25˚C) Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol V CBO V CEO V EBO ICP IC PC Tj Tstg Ratings 100 150 150 –55 ~ +150 Unit V V V mA mA mW 2SC3929 2SC3929A 2SC3929 2SC3929A n Electrical Characteristics (Ta=25˚C) Parameter Collector cutoff current Collector to base voltage Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter voltage Noise voltage Transition frequency Symbol I CBO ICEO V CBO V CEO V EBO hFE * V CE(sat) V BE NV fT Conditions V CB = 10V , IE = 0 V CE = 10V , IB = 0 IC = 10mA, IE = 0 IC = 2mA, IB = 0 IE = 10mA, IC = 0 V CE = 5V , IC = 2mA IC = 100mA, IB = 10mA V CE = 1V , IC = 100mA V CE = 10V , IC = 1mA, GV = 80dB R g = 100kW , Function = FLAT V CB = 5V , IE = –2mA, f = 200MHz min 180 typ 0.7 max 100 700 0.6 150 Unit nA mA V V V V V mV MHz *1hFE1 Rank classification Rank R S T hFE 180 ~ 360 260 ~ 520 360 ~ 700 2SC3929 SR SS ST 2SC3929A TR TS TT Marking symbol :S(2SC3929) T(2SC3929A) Unit: mm 1:Base 2:Emitter EIAJ:SC–70 3:Collector S–Mini Type Package 2.1–0.1 1.3–0.10.9–0.1 0.7–0.1 0.3 +0.1 –0 0.15 +0.1 –0.05 2.0–0.2 0.650.2 0.65 0 to 0.1 0.2–0.1 Marking Symbol 2SC3929 2SC3929A 2SC3929 2SC3929A

Transistor 2SC3929, 2SC3929A PC — Ta I C — V CE IC — IB IC — V BE V CE(sat) — IC hFE — IC fT — IE C ob — V CB NV — V CE 0 160 40 120 80 14020 100 60 240 200 160 120 Ambient temperature Ta (˚C) Collector power dissipation PC (mW ) 01 2 10826 4 160 120 100 140 Ta=25˚C IB=350mA 300mA 250mA 200mA 150mA 100mA 50mA Collector to emitter voltage VCE (V) Collector current IC (mA ) 160 120 100 140 VCE =5V Ta=25˚C Base current IB (mA ) Collector current IC (mA ) 120 100 VCE =5V Ta=75˚C –25˚C 25˚C Base to emitter voltage VBE (V) Collector current IC (mA ) 0.1 1 10 1000.3 3 30 0.01 0.03 0.1 0.3

100 IC /IB=10

Ta=75˚C 25˚C –25˚C Collector current IC (mA ) Collector to emitter saturation voltage VCE(sat) (V) 0.1 1 10 1000.3 3 30 720 600 480 360 240 120 VCE =5V Ta=75˚C 25˚C –25˚C Collector current IC (mA ) Forward current transfer ratio hFE 500 400 300 200 100 VCB =5V Ta=25˚C Emitter current IE (mA ) Transition frequency fT (MHz ) 0.1 1 10 1000.3 3 30 IE=0 f=1MHz Ta=25˚C Collector to base voltage VCB (V) Collector output capacitance Cob (pF) 1 3 10 30 100 160 120 100 140 IC =1mA G V=80dB Function=FLAT 4.7kW R g=100kW 22kW Collector to emitter voltage VCE (V) Noise voltage NV (mV )

Transistor 2SC3929, 2SC3929A NV — V CE NV — I C NV — I C NV — R g NV — R g Collector to emitter voltage VCE (V) Noise voltage NV (mV ) 1 3 10 30 100 300 240 120 180 IC =1mA G V=80dB Function=RIAA 4.7kW R g=100kW 22kW 0.01 0.03 0.1 0.3 1 160 120 100 140 VCE =10V G V=80dB Function=FLAT 4.7kW R g=100kW 22kW Collector current IC (mA ) Noise voltage NV (mV ) 0.01 0.03 0.1 0.3 1 300 240 120 180 VCE =10V G V=80dB Function=RIAA 4.7kW R g=100kW 22kW Collector current IC (mA ) Noise voltage NV (mV ) 1 3 10 30 100 300 240 120 180 VCE =10V G V=80dB Function=RIAA 0.1mA IC =1mA 0.5mA Signal source resistance Rg (kW ) Noise voltage NV (mV ) 1 3 10 30 100 160 120 100 140 VCE =10V G V=80dB Function=FLAT 0.1mA IC =1mA 0.5mA Signal source resistance Rg (kW ) Noise voltage NV (mV )