2SC3925 SANYO
Document overview
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Technical content
Wo. 2541 2803925 NPN Epitaxial Planar Type Silicon Transistor DIFFERENTIAL Amps Very HIGH-SPEED SWITCHING“APRLICATIONS - The 2SC3925 is formed with two chips, being equivalent tothe 28C3775, placed in one package. ff & ee fe Collector to Base Voltage Vopo ff Ge S20 FN Collector to Emitter Voltage Voro éé .~ ) 12 £29 Emitter to Base Voltage Vego Sf Sm Oe Collector Current Ig Pn ok eee. Base Current Ig ar ee ee Collector Dissipation Po C1 anit) 27 ho.” 250 WwW Junction Temperature Tj sf ae off 150 8 Storage Temperature Tstg es “YW +55t0 +150 PC Rlectrical Characteristics at Ta=25°C “Sy fd min typ max unit Collector Cutoff Current Ippq .°,/ Voge t2¥,Ip=0 1.0 uA Emitter Cutoff Current Teno.“ peneev.o=0 ff 10° UA DC Current Gain bpp’ Voge T0¥, Tp=20ma 40 200 DC Current Gain Ratio —hpg¢/hppd Vog=10V,Ic¢20mA #1 0.8 1.0 Base to Emitter alga Be Veget0V, 1¢220mA 10 mV Voltage Difference ff & SO Of? Gain-Bandwidth Product fp a. "Ss Veg=10UsIp=20mA #2 5.0 GHz Output Capacitance ee Cope. Wy, YopetOv f= IMHz #2 0.9 1.5 pF "1: The smaller bpp /is taketiiag ee 7 if "2: Chips in the same lot are G¥aluated as the 2SC3775. as = wi am iat . Te YA \\ ECB yy, es * E: Emitter ed Ak €: Collector E: Emitter oO B: Base alg C: Collector “ed snvo rea Bi B: Base 236 2 ° wri SANYO: DP6B Specifications and information herein are subject to change without notice. SANYO Electric Co.,Ltd. Semiconductor Overseas Marketing Div. Natsume Bldg, 18-6, 2 chome. Yushima, Bunkyo-ku, TOKYO 143 JAPAN #207TA.TS No.2541-1/4
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