2SA1526 SANYO
Document overview
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Technical content
Features
- . On-chip bias resistance (Ry=10k0, Re=10k0) - Large current capacity (Ig=500mA) ( ): 28a1526 Absolute Maximum Ratings at Ta=25°C unit Collector to Base Voltage Vopo (-)50 Vv Collector to Emitter Voltage Vego (-)50 Vv Emitter to Base Voltage VeRo {(-)10 Vv Collector Current Ic . (-)500 mA Collector Current (Pulse) Iop (-)800 mA Collector Dissipation Po 600 oW Junction Temperature Tj 150 °C Storage Temperature Tstg “55 to +150 °C Electrical Characteristics at Ta=25°C nin typ max unit Collector Cutoff Current Igpq Vege(-)40V,I,=0 (-)0.1 vA Togo Vog=(-)40V,Ip=0 (-)0.5 pA Emitter Cutoff Current Ippo Vpp=(-)5V,Ig=0 (-)195 (-)250 (~)360 nA DC Current Gain bpp Voge (-)5V,Ip=(-) 10mA _ 50 Gain-Bandwidth Product fy Vog=(-) 10V,I¢=(—)5mA 250 MHz : (200) MHz Output Capacitance Cop Voge (-) 100, f= MHz 3.7 pF (5.5) pF C-E Saturation Voltage Von(sat) Ig=(-)20mA ,1g=(~) 1mA (-)0.1 (-)0.3 V C-B Breakdown Voltage = V(prycpo Ic=(-) 1A, Ip=0 (-)50 v C-E Breakdown Voltage V(r) cg0 Tp=(-) 100A, fi R= OO (-)50 v Input OFF-State Voltage Vz(or¢) Vop=(-)5V, Ig=(=) 1004 (-)0.8 (-)1.1 (-)1.5 0 V Input ON-State Voltage Vi(on) Vogt(-)0-2V,Iq=(-) 10mA(~) 7.0 (-)2.0 (-)4.0 Vv Input Resistance Ry 7 10 13. kQ Resistance Ratio Ry/Ro 0.9 1.0 1.1 Electrical Connection Package Dimensions 2003A Collector Coltector fee (OUTPUT) (OUTPUT) (unit: mm) Ao an 20 0.64 Rt RI O45 II _ oe —— mm gE wn gD i 2 RZ R2 ~ O45 Emitter Emitter JEDEC: TO-92 B. Base (Gnd) (GNO) EIAZ : SC-43 Cc. Collector 2841526:PNP 2503920: NPN SANYO: NP E. Emitter SANYO Electric Co.,Ltd. Semiconductor Business Headquarters TOKYO OFFICE Tokyo Bldg. 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110 JAPAN 3317KI/DO86TA, TS No.2150-1/2
a SSSSSSSSSSSSSSSSSSSSSSSSSSSSSSSSSSSsSsSSSssSsssSsSsSsSSSSSMSSSMMsseFeee hee - I¢ i Vi(on) - Ic Vcessul IIT TPT na Vcesd.2v | | | 28a152672sc3920 =10k @ #R1=10k2 = E R2=10kw2 HSH = [R2=10K2 ME ELT | — = . = 10} b a ae EE Fe A OCT Tree toa Ea eicecoirsE : thay sce Z ILAt i Tr 3 rt 4 t eet TTT) é, ere [TTT | [(For PNP, minus sign is omitted.) A | |(For PNP, minus sign is omitted.) wo 10 1 a 0 10 100 Collector Current,I¢ - mA Collector Current,Ig ~ mA Ic _- Vi(off) Veessv || 284 1526/28C3920 q!00}R 12 10k 2 SR e1pKc— —— ' TI (-—}+-—~ os 4 Pe a ee ey —
6 JT 7 —
sg, [ [7 g++] 7 ETT Tec te, 8 {| | minus sign is omitted.) oe 09 it) uu 42 3 “ Input OFF-State Voltage, Vr(ore) - V No products described or contained herein are intended for use in surgical implants, life-support systems, aerospace equipment, nuclear power control systems, vehicles, disaster/crime-prevention equipment and the like, the failure of which may directly or indirectly cause injury, death or property loss. Anyone purchasing any products described or contained herein for an above-mentioned use shall: ® Accept full responsibility and indemnify and defend SANYO ELECTRIC CO. LTD., its affiliates, subsidiaries and distributors and all their officers and employees, jointly and severally, against any and all claims and litigation and all damages, cost and expenses associated with such use: ® Not impose any responsibility for any fault or negligence which may be cited in any such claim or litigation on SANYO ELECTRIC CO, LTD, its affiliates, subsidiaries and distributors or any of their officers and employees jointly or severally. Ml Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guarant- eed for volume production, SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. om SSSeSSSSSSSSSSSSSSSSSSSSSSSSSSSSSSSSSesessesee No.2150-2/2