2SA1518 SANYO

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« On-chip bias resistance: (R1=10kQ, R2=10kQ) » Small-sized package: CP » Large current capacity: 1,=500mA ( ): -28A1518 ° . Absolute Maximum Ratings at Ta=25 C unit Collector to Base Voltage Vogo (-)50 Vv Collector to Emitter Voltage Voro (-)50 Vv Emitter to Base Voltage VB (-)10 Vv Collector Current To (-)500 mA Collector Current(Pulse) Icp (-)800 mA Collector Dissipation PG 200 aw Junction Temperature Ty 150 of Storage Temperature Tyeg -55 to +150 ~C Electrical Characteristics at Ta=25°C min typ) max unit Collector Cutoff Current I Vin=(-)40V,1=0 (-)0.1 pA CBO CB E. loro Vogs(-) 40V, 1,=0 (-)0.5 pA Emitter Cutoff Current Teo Vege (-)5V, 1,0 (-) 195 (-) 250(-) 360 pA DC Current Gain hee Vogt (-) 5V,1 =(-)10mA 50 Gain-Bandwidth Product ff Veer (-) 10V, f= (-) 5mA 250 Miz (200) MHz Qutput Capacitance c V3=(-) LOV, £=1MHz 3.7 pF ob CB (5.5) pF Collector to Emitter Vv I.=(-) 20mA, (-)0.1(-)0.3 v Saturation Voltage CE(sat) Tp=(~) mA Collector to Base v I,=(-) 1L0pA,1,=0 (-)50 v Breakdown Voltage (BR)CBO “C E Collector to Emitter v L =(-)100ua, =o (-)50 Vv Breakdown Voltage (BR)CEO “C "he Continued on next page. Package Dimensions 2018A ,, Electrical Connection Coltéeroe (unit :mm) G off O6 (OUTPUT) (ouTPuT) ki Marking wy . a 28A1518: LL an a an ose tase 2sc3912: TY aya jt = ona at an 33 |} tral C: Collector B: Base Emitter Emitter ] | E: Bnitter (ono) (GND) Ltt, : 2841518: PNP 2803912: NPN SANYO: cP SANYO Electric Co.,Ltd. Semiconductor Business Headquarters TOKYO OFFICE Tokyo Bldg., 1-10,1 Chome, Ueno, Taito-ku, TOKYO, 110 JAPAN 3307KI/8196AT,TS No.2159-1/2

"2SA1518/2SC3912 Ee Continued from preceding page. min typ max unit Input OFF-State Voltage Vi (oes) eS rin (-)0.8(-)1.1(-)1.5 T(on) CE) toma Input Resistance RI ¢ 7 10 13 ka Resistance Ratio R1/R2 0.9 #10 1.1 hee - I¢ Vt(on) - Ic Ves=5v | | |_| 28at518/28c3912 > [vos=o.2v_[ | [| 2sats1872scao12 RI=10kQ ' Ri= 10k

2 SERED ti

fe 2n } y

2 Ler) cece

Fy HAT z 7 | pee < eT =. | 3 8 ETT | a B10 ° I EF atlttLitT? Tritt 7 7- (For PNP, minus sign is omitted.) (For PNP, minus sign is omitted.) wo 2 3 Si 2 3 Sty 23 To tS 379 23 S 7m T3 Collector Current, I, - mA Collector Current, I, - mA Ic - Vi(off) Vog=sv T 28415 18/ 2803912

1000 FRI=10KQ

Zo} | Yi | | 2 100 oe ye oe | Bq 5 rr} fF » — 1 Tr 8 jf 3 “[ —[~“Jminus sign is omitted.) Input OFF Voltage Vi (gee) - V 1H No products described or contained herein are intended for use in surgical implants, life-support systems, aerospace equipment, nuclear power control systems, vehicles, disaster/crime-prevention equipment and the like, the failure of which may directly or indirectly cause injury, death or property loss. M Anyone purchasing any products described or contained herein for an above-mentioned use shall ® Accept full responsibility and indemnify and defend SANYO ELECTRIC CO,, LTD., its affiliates, subsidiaries and distributors and all their officers and employees, jointly and severally, against any . and all claims and litigation and all damages, cost and expenses associated with such use: ® Not impose any responsibility for any fault or negligence which may be cited in any such claim or litigation on SANYO ELECTRIC CO, LTD, its affiliates, subsidiaries and distributors or any of their officers and employees jointly or severally, W Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guarant- eed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties, 215 9-2/2