2SC3886A ISC
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 3
Technical content
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3886A DESCRIPTION ·
- With TO-3P(H)IS package
- High voltage ,high speed
APPLICATIONS
- Horizontal deflection output for high resolution display
- High speed switching regulator output
1 Base
2 Collector
3 Emitter
Absolute maximum ratings (Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 1500 V VCEO Collector-emitter voltage Open base 600 V VEBO Emitter-base voltage Open collector 5 V IC Collector current 8 A ICM Collector current-peak 15 A IB Base current 4 A PC Collector power dissipation TC=25℃ 50 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ Fig.1 simplified outline (TO-3P(H)IS) and symbol
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3886A CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage I C=5mA ;IB=0 600 V VCEsat Collector-emitter saturation voltage I C=6A ;IB=1.5A 5.0 V VBEsat Base-emitter saturation voltage I C=6A ;IB=1.5A 1.5 V ICBO Collector cut-off current V CB=1500V; IE=0 1.0 mA IEBO Emitter cut-off current V EB=5V; IC=0 10 μA hFE DC current gain I C=1A ; VCE=5V 8 15 fT Transition frequency I C=0.1A ; VCE=10V 1 3 MHz COB Collector output capacitance I E=0 ; VCB=10V;f=1MHz 210 pF ts Storage time 2.5 μs tf Fall time Resistive load ICP=6A ;IB1=-IB2=1.2A RL=33.3Ω 0.15 μs
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3886A PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm)