2SC3886 ISC
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 4
Technical content
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3886
DESCRIPTION
- With TO-3P(H)IS package
- High speed
- High voltage
APPLICATIONS
- Horizontal deflection output for high resolution display
- High speed switching regulator output
1 Base
2 Collector
3 Emitter
Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 1400 V VCEO Collector-emitter voltage Open base 600 V VEBO Emitter-base voltage Open collector 5 V IC Collector current 8 A ICM Collector current-peak 15 A IB Base current 4 A PT Total power dissipation TC=25℃ 50 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ Fig.1 simplified outline (TO-3P(H)IS) and symbol
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3886 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage I C=5mA ;IB=0 600 V VCEsat Collector-emitter saturation voltage I C=6A; IB=1.5A 5 V VBEsat Base-emitter saturation voltage I C=6A; IB=1.5A 5 V ICBO Collector cut-off current V CB=1400V; IE=0 1.0 mA IEBO Emitter cut-off current V EB=5V; IC=0 10 μA hFE DC current gain I C=1A ; VCE=5V 8 15 Cob Collector output capacitance I E=0 ; VCB=10V,f=1MHz 150 pF fT Transition frequency I E=0.1A ; VCE=10V 3 8 MHz Switching times inductive load ts Storage time 2.5 4.0 μs tf Fall time ICP=6A;IB1=1.2A fH =64kHz LY=120μH;CY=7500pF 0.1 0.5 μs
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3886 PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.20 mm)
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3886